SMD Type
PNP Transistors
CZT127
(KZT127)
SOT-223
6.50±0.2
3.00±0.1
Transistors
Unit:mm
。
10
■
Features
7.0±0.3
4
3.50±0.2
●
Silicon Power Darlington Transistors
●
Low speed switching and amplifier applications
●
Complementary to CZT122
1
2
3
2.30 (typ)
1.80 (max)
0.250
Gauge Plane
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
3.Emitter
4.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
-100
-100
-5
-5
1
150
-65 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE(1)
h
FE(2)
C
ob
f
T
Test Conditions
Ic= -1mA， I
E
= 0
Ic= -30 mA， I
B
= 0
I
E
= -1 mA， I
C
= 0
V
CB
= -100 V , I
E
= 0
V
CE
= -50 V , I
E
= 0
V
EB
= -5V , I
C
=0
I
C
=-3 A, I
B
=-12mA
I
C
=-5 A, I
B
=-20mA
I
C
=-5 A, I
B
=-20mA
V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -500mA
V
CE
= -3V, I
C
= -3A
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -4V, I
C
= -3A,f=1MHz
4
1000
1000
200
pF
MHz
Min
-100
-100
-5
-200
-500
-2
-2
-4
-1.2
-2.5
V
uA
mA
V
Typ
Max
Unit
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