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GTVA107001FCV1R2

产品描述RF Power Field-Effect Transistor,
产品类别分立半导体    晶体管   
文件大小242KB,共8页
制造商Cree(科瑞)
官网地址http://www.cree.com/
下载文档 详细参数 全文预览

GTVA107001FCV1R2概述

RF Power Field-Effect Transistor,

GTVA107001FCV1R2规格参数

参数名称属性值
厂商名称Cree(科瑞)
包装说明FLATPACK, R-CDFP-F2
Reach Compliance Codeunknown
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压150 V
最大漏极电流 (ID)10 A
FET 技术HIGH ELECTRON MOBILITY
最高频带L BAND
JESD-30 代码R-CDFP-F2
元件数量1
端子数量2
工作模式DEPLETION MODE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式FLATPACK
极性/信道类型N-CHANNEL
表面贴装YES
端子形式FLAT
端子位置DUAL
晶体管应用AMPLIFIER
晶体管元件材料GALLIUM NITRIDE

GTVA107001FCV1R2文档预览

GTVA107001EC/FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
700 W, 50 V, 960 – 1215 MHz
Description
The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC
high electron mobility transistors (HEMT) for use in the 960 to 1215
MHz frequecy band. They feature input matching, high efficiency, and
thermally-enhanced packages.
GTVA107001EC
Package H-36248-2
Power Sweep, Pulsed CW
V
DS
= 50 V, I
DQ
= 100 mA, 128 μs pulse width,
10% duty cycle, power optimized
80
GTVA107001FC
Package H-37248-2
Features
ergoqhgorgn'
qpjgfq4po5g
Gain: 960 MHz
Gain: 1030 MHz
Gain: 1090 MHz
Gain: 1150 MHz
Gain: 1215 MHz
Eff: 960 MHz
Eff: 1030 MHz
Eff: 1090 MHz
Eff: 1150 MHz
Eff: 1215 MHz
GaN on SiC HEMT technology
Input matched
Typical pulsed CW performance (class AB), 1030
MHz, 50 V, 128 µs pulse width, 10% duty cycle
- Output power P
3dB
= 890 W
- Drain efficiency = 75%
- Gain = 18 dB
Capable of withstanding a 10:1 load mismatch (all
phase angles at 700 W peak power under pulse
conditions: 50 V, 100 mA I
DQ
,128 µs pulse width,
10% duty cycle
Human Body Model Class IC (per ANSI/ESDA/
JEDEC JS-001)
Pb-free and RoHS-compliant
Gain (dB), Efficiency (%)
70
60
50
40
30
20
10
g107001efc-gr3
0
200
400
600
800
1000
Pout (W)
RF Characteristics
Pulsed RF Performance
(tested in Wolfspeed production test fixture)
Characteristic
Gain
Drain Efficiency
GTVA107001EC: V
DD
= 50 V, I
DQ
= 100 mA, P
OUT
= 700 W, ƒ = 1030 MHz, 128
μs
pulse width, 10% duty cycle
Symbol
G
ps
Min
17.5
67
Typ
20
70
Max
22
Unit
dB
%
D
Symbol
G
ps
GTVA107001FC: V
DD
= 50 V, I
DQ
= 100 mA, P
OUT
= 700 W, ƒ = 1030 MHz, 128
μs
pulse width, 10% duty cycle
Characteristic
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Min
17.5
65
Typ
20
70
Max
22
Unit
dB
%
D
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
2
Conditions
V
GS
= –8 V, I
D
= 10 mA
V
GS
= –8 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 84 mA
Symbol
V
(BR)DSS
I
DSS
V
GS(th)
Min
150
–6.2
Typ
–3.0
Max
12
–2.2
Unit
V
mA
V
Recommended Operating Conditions
Parameter
Drain Operating Voltage
Gate Quiescent Voltage
V
DS
= 50 V, I
D
= 0.10 A
Conditions
Symbol
V
DD
V
GS(Q)
Min
0
Typ
–3.2
Max
50
Unit
V
V
Absolute Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Gate Current
Drain Current
Junction Temperature
Storage Temperature Range
Symbol
V
DSS
V
GS
I
G
I
D
T
J
T
STG
Value
125
–10 to +2
100
10
225
–65 to +150
Unit
V
V
mA
A
°C
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V
DD
) specified above.
Thermal Chracteristics
1
T
CASE
= 85 °C, P
diss
= 334 W, 50 V, I
DQ
= 100 mA, 128
μs
pulse width, 10% duty cycle
2
T
CASE
= 85 °C, P
diss
= 254 W, 50 V, I
DQ
= 100 mA, Mode-S signal
Parameter
Thermal Resistance, Junction to Case
1
Thermal Resistance, Junction to Case
2
Symbol
R
JC
R
JC
Value
0.21
0.25
Unit
°C/W
°C/W
Ordering Information
Type and Version
GTVA107001EC V1 R0
GTVA107001EC V1 R2
GTVA107001FC V1 R0
GTVA107001FC V1 R2
Order Code
GTVA107001EC-V1-R0
GTVA107001EC-V1-R2
GTVA107001FC-V1-R0
GTVA107001FC-V1-R0
Package and Description
H-36248-2, bolt-down flange
H-36248-2, bolt-down flange
H-37248-2, earless flange
H-37248-2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
Typical Performance
(data taken in Wolfspeed production test fixture)
3
Power Sweep: Gain v. Output Power
(series show gain at frequency)
V
DS
= 50 V, I
DQ
= 100 mA, 128 μs pulse width,
10% duty cycle, power optimized
25
23
25
23
Power Sweep: Gain v. Output Power
(series show gain at various duty cycles)
V
DS
= 50 V, I
DQ
= 100 mA, ƒ = 1030 MHz
Gain (dB)
Gain (dB)
21
19
17
15
0
200
400
600
800
Gain, 1030 MHz
Gain, 1090 MHz
Gain, 1150 MHz
g107001efc-gr2
21
19
17
15
0
200
400
600
800
Gain, 128 μs-10%
Gain, 128 μs-1%
Gain, Mode-S
g107001efc-gr1
1000
1000
Output Power (W)
Output Power (W)
CW Performance Small Signal
Gain & Input Return Loss
V
DD
= 50 V, I
DQ(MAIN)
= 1000 mA
23
0
MODE-S: (32μs-ON/18-μs-OFF)x48,
LTDF-6.4%
V
DS
= 50 V, I
DQ
= 100 mA, measured on 24th
pulse
80
Gain: 1030MHz
80
Pout: 1030MHz
Eff: 1030MHz
Input Return Loss (dB)
22
Gain (dB)
-5
Gain (dB), P
OUT
(dBm)
Gain
70
60
50
40
30
20
10
26
28
70
Efficiency (%)
60
50
40
30
20
g107001efc_gr 8
21
-10
20
-15
IRL
19
-20
18
800
900
1000
1100
1200
g107001efc-gr7
-25
1300
10
30
32 34 36
P
IN
(dBm)
38
40
42
Frequency (MHz)
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
Load Pull Performance
Each Side Load Pull Performance
–16
μs
pulse width, 10% duty cycle, class AB, V
DD
= 50 V, 60 mA
Max Output Power
Freq P
OUT
[MHz] [dBm]
960
1030
1090
1150
1200
1215
60.37
60.14
59.88
59.34
59.20
59.02
P
OUT
[W]
1088.93
1032.76
972.75
859.01
831.76
797.99
Eff
[%]
75.03
74.45
73.06
67.27
66.29
65.34
Gain
[dB]
19.66
19.58
19.08
19.46
19.34
19.44
Z
Load
[]
1.28+j0.10
1.28+j0.19
1.32+j0.28
1.51+j0.13
1.54+j0.11
1.59+j0.01
P
OUT
[dBm]
59.43
58.68
58.73
58.30
58.12
57.74
4
Max Efficiency
P
OUT
[W]
877.00
737.90
746.45
676.08
648.63
594.29
Eff
[%]
83.15
83.12
80.44
77.38
75.83
73.93
Gain
[dB]
20.84
20.88
19.94
20.91
20.09
20.63
Z
Load
[]
1.37+j0.85
1.61+j1.01
1.83+j0.97
1.72+j1.07
2.19+j0.97
2.02+j1.07
P
OUT
[dBm]
60.02
60.01
59.70
59.21
59.09
58.94
P
OUT
[W]
1004.62
1002.31
933.25
833.68
810.96
783.43
Eff
[%]
Z Optimum
Gain
[dB]
20.45
20.00
19.53
20.07
19.79
19.97
Z
Load
[]
1.28+j0.52
1.39+j0.43
1.48+j0.52
1.59+j0.46
1.68+j0.33
1.70+j0.33
Z
Source
[]
0.38-j1.05
0.43-j1.15
0.66-j1.27
0.81-j1.44
1.00-j1.73
1.55-j1.60
79.99
78.22
77.40
72.17
70.51
70.07
Reference Circuit tuned for 0.960 to 1.215 GHz
DUT
Reference Circuit Part No.
PCB
GTVA107001EC V1 or GTVA107001FC V1
LTN/GTVA107001FC V1 or LTN/GTVA107001FC V1
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper,
r
= 3.66
C215
V
DD
V
GG
RO4350, 20 MIL (105)
C114
RO4350, 20 MIL (193)
C214
C213
C115
R103
R104
R102
C111
C209
C212
C210
C211
C101
C103
C105
C110
C109
C107
C201
C203
width of device
0.385 x 1.6666
= 0.64
C204
C202
C205
C207
RF_IN
C102
C104
C106
C108
RF_OUT
C206
C208
R101
C112 C113
0.96
1.215 GHZ, E04
0.96
1.215 GHZ, E04
GTVA107001FC_IN_02A
Reference circuit assembly diagram (not to scale)
GTVA107001FC_OUT_02A
g t va 1 07 00 1e f c_ C D _ 2 01 8- 0 7- 2 4
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
Reference Circuit
(cont.)
Components Information
Component
Input
C101, C109, C115
C102
C103, C104
C105
C106
C107, C108
C110, C112, C113
C111
C114
R101, R102
R103
R104
5
Description
Capacitor, 56 pF
Capacitor, 0.4 pF
Capacitor, 1 pF
Capacitor, 3.6 pF
Capacitor, 3.3 pF
Capacitor, 0.2 pF
Capacitor, 5.6 pF
Capacitor, 6.8 pF
Capacitor, 1
μF
Resistor, 10 W
Resistor, 5.6 W
Resistor, 100 W
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
TDK Corporation
Panasonic – ECG
Panasonic – ECG
Panasonic – ECG
P/N
ATC800A560JT250XT
ATC600F0R4AT250XT
ATC600F1R0BT250XT
ATC600F3R6BT250XT
ATC600F3R3BT250XT
ATC600F0R2AT250XT
ATC600F5R6BT250XT
ATC600F6R8BT250XT
C4532X7R2A105M230KA
ERJ-3GEYJ100V
ERJ-8RQJ5R6V
ERJ-3GEYJ101V
Output
C201
C202
C203, C204
C205, C206, C207
C208
C209
C210
C211
C212
C213
C214
C215
Capacitor, 7.5 pF
Capacitor, 6.8 pF
Capacitor, 2.4 pF
Capacitor, 1.5 pF
Capacitor, 39 pF
Capacitor, 56 pF
Capacitor, 10
μF
Capacitor, 22
μF
Capacitor, 100
μF
Capacitor, 220
μF
Capacitor, 1
μF
Capacitor, 100 V, 6800
μF
ATC
ATC
ATC
ATC
ATC
ATC
TDK Corporation
Cornell Dubilier Electronics (CDE)
Cornell Dubilier Electronics (CDE)
Panasonic – ECG
TDK Corporation
Panasonic – ECG
ATC600F7R5BT250XT
ATC600F6R8BT250XT
ATC600F2R4BT250XT
ATC600F1R5BT250XT
ATC600F390JT250XT
ATC800A560JT250XT
C5750X5R1H106K230KA
SEK220M100ST
SK101M100ST
ECA-2AHG221
C4532X7R2A105M230KA
ECO-S2AP682EA
Pinout Diagrams
(top view)
D
S
Source
(flange)
D
Source
(flange)
h-36248-2_2016-09-26
h-37248-2_2016-09-23
G
GTVA107001EC
Package H-36248-2
Pin
D
G
S
Description
Drain
Gate
Source (flange)
G
GTVA107001FC
Package H-37248-2
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
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