SMD Type
NPN Tra nsistors
H8050
■
Features
●
Collector Power Dissipation: P
C
=0.5W
●
Collector Current: I
C
=1.5A
●
Comlementary to H8550
0.42 0.1
0.46 0.1
1.70
0.1
Transistors
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
40
25
5
1.5
0.5
150
-55 to +150
Unit
V
V
V
A
W
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Base-emitter positive favor voltage
output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
Test conditions
I
C
= 100μA, I
E
=0
I
C
= 0.1mA, I
B
=0
I
E
= 100μA, I
C
=0
V
CB
= 40 V,I
E
=0
V
CE
= 20V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 1V, I
C
= 100mA
V
CE
= 1V, I
C
= 800mA
85
40
0.5
1.2
1
1.55
15
100
V
V
V
V
pF
MHz
Min
40
25
5
0.1
0.1
0.1
400
Typ
Max
Unit
V
V
V
μA
μA
μA
V
CE(sat)
I
C
=800mA, I
B
= 80mA
V
BE(sat)
I
C
=800mA, I
B
=80mA
V
BE(on)
I
c
=1V,V
CE
=10mA
V
BEF
C
ob
f
T
I
B
=1A
V
CB
=10V,I
E
=0,f=1MHz
V
CE
= 10V, I
C
=50mA
■
Classification of h
fe(1)
Type
Range
Marking
H8050-B
85-160
8050B
H8050-C
120-200
8050C
H8050-D
160-300
8050D
H8050-D3
300-400
8050D3
www.kexin.com.cn
1
SMD Type
H8050
■
Typical Characteristics
0.5
1000
Transistors
V
CE
= 1V
I
C
[mA], COLLECTOR CURRENT
I
B
= 3.0mA
0.4
h
FE
, DC CURRENT GAIN
2.0
I
B
= 2.5mA
0.3
100
I
B
= 2.0mA
I
B
= 1.5mA
I
B
= 1.0mA
0.2
10
0.1
I
B
= 0.5mA
0
0.4
0.8
1.2
1.6
1
0.1
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
V
CE
= 1V
V
BE
(sat)
1000
I
C
[mA], COLLECTOR CURRENT
10
100
1000
10
100
1
V
CE
(sat)
10
0.1
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
1000
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
I
E
= 0
f = 1MHz
V
CE
= 10V
C
ob
[pF], CAPACITANCE
100
100
10
10
1
1
10
100
1
1
10
100
400
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
2
www.kexin.com.cn
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
