SMD Type
NPN Transistors
CZT5551
(KZT5551)
SOT-223
6.50±0.2
3.00±0.1
Transistors
Unit:mm
。
10
■
Features
7.0±0.3
4
3.50±0.2
●
High Voltage
●
High Voltage Amplifier Application
1
2
3
2.30 (typ)
1.80 (max)
0.250
Gauge Plane
0.02 ~ 0.1
1.Base
2.Collector
0.70±0.1
4.60 (typ)
3.Emitter
4.Collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Rating
180
160
6
0.6
1
125
150
-55 to 150
A
W
℃/W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
DC current gain
Collector output capacitance
Emitter input capacitance
Transition frequency
h
FE(2)
h
FE(3)
C
ob
C
ib
f
T
Test Conditions
Ic= 100uA， I
E
= 0
Ic= 1 mA， I
B
= 0
I
E
= 100 uA， I
C
= 0
V
CB
= 120 V , I
E
= 0
V
EB
= 4V , I
C
=0
I
C
=10m A, I
B
=1mA
I
C
=50m A, I
B
=5mA
I
C
=10m A, I
B
=1mA
I
C
=50m A, I
B
=5mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
V
CE
= 10V, I
C
= 10mA,f=1MHz
100
80
80
30
6
20
300
pF
MHz
250
Min
180
160
6
50
50
0.15
0.2
1
1
V
nA
V
Typ
Max
Unit
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1
SMD Type
NPN Transistors
CZT5551
■
Typical Characterisitics
18
Transistors
(KZT5551)
h
FE
——
COMMON EMITTER
V
CE
=5V
Static Characteristic
90uA
COMMON
EMITTER
T
a
=25
℃
500
I
C
COLLECTOR CURRENT I
C
(mA)
15
80uA
70uA
T
a
=100
℃
DC CURRENT GAIN h
FE
12
60uA
50uA
40uA
T
a
=25
℃
100
9
6
30uA
I
B
=20uA
3
0
0
2
COLLECTOR-EMITTER VOLTAGE
4
6
8
V
CE
(V)
10
12
10
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
1.0
V
BEsat
——
β=10
I
C
0.3
V
CEsat
——
β=10
I
C
0.8
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.6
0.1
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
0.4
0.2
0.1
1
10
100
200
0.01
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
200
100
I
C
——
COMMON EMITTER
V
CE
=5V
V
BE
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
I
C
(mA)
T
a
=100
℃
COLLECTOR CURRENT
T
a
=25
℃
10
CAPACITANCE C (pF)
C
ib
T
a
=25
℃
10
C
ob
1
0.2
0.4
BASE-EMITTER VOLTAGE
0.6
V
BE
(V)
0.8
1.0
1
0.1
REVERSE VOLTAGE
1
V
(V)
10
20
150
f
T
T
a
=25
℃
V
CE
=10V
——
I
C
1.2
P
C
——
T
a
TRANSITION FREQUENCY f
T
(MHz)
COLLECTOR POWER DISSIPATION
P
C
(W)
10
1.0
100
0.8
0.6
0.4
0.2
50
1
3
20
30
0.0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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