SMD Type
NPN Transistors
MJD13003
Transistors
1.70
0.1
■
Features
●
Collector Current Capability I
C
=1.5A
●
Collector Emitter Voltage V
CEO
=400V
●
Power Switching Applications
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
700
400
9
1.5
0.5
150
-55 to 150
A
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Fall time
Storage time
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE(1)
h
FE(2)
t
f
t
s
f
T
Test Conditions
Ic= 1 mA， I
E
= 0
Ic= 10 mA， I
B
= 0
I
E
= 1 mA， I
C
= 0
V
CB
= 700 V , I
E
= 0
V
CE
= 400 V , I
E
= 0
V
EB
= 9V , I
C
=0
I
C
=1 A, I
B
=250mA
I
C
=1 A, I
B
=250mA
V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 1.5A
I
C
=1A,I
B1
=-I
B2
=0.2A ,V
CC
=100V
I
C
=250mA
V
CE
= 10V, I
C
= 100mA,f=1MHz
2
5
10
5
0.5
4
uS
MHz
Min
700
400
9
1
0.5
1
0.6
1.2
40
V
mA
V
Typ
Max
Unit
■
Classification of h
fe(1)
Rank
Range
A
10-15
B
15-20
C
20-25
D
25-30
E
30-35
F
35-40
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1
SMD Type
NPN Transistors
MJD13003
■
Typical Characterisitics
1.00
Transistors
Static Characteristic
COMMON EMITTER
T
a
=25
℃
50mA
45mA
35mA
30mA
25mA
20mA
15mA
h
FE
40mA
100
h
FE
COMMON EMITTER
V
CE
= 5V
T
a
=100
℃
T
a
=25
℃
——
I
C
(A)
I
C
0.75
COLLECTOR CURRENT
0.50
DC CURRENT GAIN
10
0.25
10mA
I
B
=5mA
0.00
0
1
2
3
4
5
6
7
1
1
10
100
1000
1500
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1200
V
BEsat
——
β=4
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
1000
V
CEsat
β=4
——
I
C
1000
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
100
0
℃
10
T
a
=
℃
25
T
a
=
600
T
a
=25
℃
T
a
=100
℃
400
200
0.1
1
10
100
1000
1500
10
1
10
100
1000
1500
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
1500
1000
I
C
COMMON EMITTER
V
CE
=5V
——
V
BE
0.6
P
C
——
T
a
100
COLLECTOR CURRENT
T=
a
25
℃
10
1
0.1
0
200
400
600
800
1000
COLLECTOR POWER DISSIPATION
P
C
(W)
(mA)
0.5
0.4
I
C
T=
a
10
0
℃
0.3
0.2
0.1
0
0
25
50
75
100
125
150
BASE-EMMITER VOLTAGE V
BE
(mV)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
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