SUN12A65F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: R
DS(on)
=0.68Ω (Typ.)
Low gate charge: Q
g
=38nC (Typ.)
Low reverse transfer capacitance: C
rss
=14.5pF (Typ.)
Lower EMI noise
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
SUN12A65F
Marking
SUN12A65
Package
TO-220F-3L
GDS
TO-220F-3L
Marking Information
Column 1: Manufacturer
Column 2: Production Information
AUK
AUK
◎△YMDD□
Δ
YMDD
SUN12A65
SDB20D45
e.g.)
◎
△YMDD
□
-.
◎
: Option Code
-.
△:
Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
-.
□: Package Option Code
Column 3: Device Code
(T
C
=25C unless otherwise noted)
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Symbol
V
DSS
V
GSS
I
D
T
c
=25C
T
c
=100C
I
DM
Rating
650
30
12
7.58
48
140
12
3.2
32
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Drain current (Pulsed)
*
(Note 2)
(Note 1)
(Note 1)
Single avalanche energy
E
AS
I
AR
E
AR
P
D
T
J
T
stg
Repetitive avalanche current
Repetitive avalanche energy
Power dissipation
Junction temperature
Storage temperature range
* Limited only maximum junction temperature
Rev. date: 24-JUL-14
KSD-T0O164-000
www.auk.co.kr
1 of 8
SUN12A65F
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 3.9
Max. 62.5
Unit
C/W
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
(Note 3,4)
(Note 3,4)
(Note 3,4)
(Note 3)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=650V, V
GS
=0V
V
DS
=650V, T
c
=150C
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=6A
V
DS
=10V, I
D
=6A
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Min.
650
3
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
0.68
13.5
2470
160
14.5
38
95
155
105
38
15
9
Max.
-
5
1
100
100
0.8
-
-
-
-
-
-
-
-
45
-
-
Unit
V
V
uA
uA
nA
S
pF
Turn-off delay time
Fall time
(Note 3,4)
V
DS
=325V, I
D
=12A,
R
G
=25Ω
-
-
-
-
ns
Total gate charge
(Note 3,4)
(Note 3,4)
Q
g
Q
gs
Q
gd
V
DS
=520V, V
GS
=10V,
I
D
=12A
Gate-source charge
Gate-drain charge
-
-
nC
(Note 3,4)
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3,4)
(Note 3,4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
SD
=12A
I
SD
=12A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
500
4.3
Max.
12
48
1.4
-
-
Unit
A
A
V
ns
uC
Reverse recovery charge
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=1.8mH, I
AS
=12A, V
DD
=50V, R
G
=25, Starting T
J
=25C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 24-JUL-14
KSD-T0O164-000
www.auk.co.kr
2 of 8
SUN12A65F
Typical Electrical Characteristics Curves
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
Fig.3 On-Resistance Variation with Drain Current
and Gate Voltage
Fig. 4 Body Diode Forward Voltage Variation
with Source Current
Fig. 5 Typical Capacitance Characteristics
Fig. 6 Typical Total Gate Charge Characteristics
Rev. date: 24-JUL-14
KSD-T0O164-000
www.auk.co.kr
3 of 8
SUN12A65F
Fig. 7 Breakdown Voltage Variation vs. Temperature
Fig. 8 On-Resistance Variation vs. Temperature
Fig. 9 Maximum Drain Current vs. Case Temperature
Fig. 10 Maximum Safe Operating Area
Fig. 11 Transient Thermal Impedance
Rev. date: 24-JUL-14
KSD-T0O164-000
www.auk.co.kr
4 of 8
SUN12A65F
Fig. 12 Gate Charge Test Circuit & Waveform
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 E
AS
Test Circuit & Waveform
Rev. date: 24-JUL-14
KSD-T0O164-000
www.auk.co.kr
5 of 8
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