SNN2515D
N-Channel Enhancement Mode MOSFET
Features
V
DSS
= 150V, I
D
= 25A
Low drain-source On resistance:
R
DS(on)
= 55mΩ (Typ.) @ V
GS
= 10V, I
D
= 12A
R
DS(on)
= 60mΩ (Typ.) @ V
GS
= 5V, I
D
= 10A
High power and current handing capability
Lead Free and Green devices available (RoHS Compliant)
D
G
Applications
Power Management in TV Converter
DC-DC Converter
S
TO-252
Package
TO-252
Ordering Information
Part Number
SNN2515D
Marking
SNN2515
Marking Information
SNN
2515
YWW
Column 1, 2: Device Code
Column 3: Production Information
e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
(Note 1)
Drain current (Pulsed)
(Note 1)
Power dissipation
Operating junction temperature
Storage temperature range
I
D
Symbol
V
DSS
V
GSS
T
c
=25C
T
c
=100C
I
DM
P
D
T
J
T
stg
Rating
150
20
25
15.8
100
83.3
150
-55 to 150
Unit
V
V
A
A
A
W
C
C
Rev. date: 05-JUN-13
KSD-T6O044-000
www.auk.co.kr
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SNN2515D
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 1.8
Max. 50
Unit
C/W
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Off Characteristics
Drain-source breakdown voltage
Drain-source cut-off current
Gate body leakage current, forward
Gate body leakage current, reverse
On Characteristics
(Note 2)
Gate threshold voltage
Drain-source on-resistance
Dynamic Characteristics
(Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching Characteristics
(Note 3)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total gate charge
Gate-source charge
Gate-drain charge
Diode forward current
Maximum diode forward current
Drain-source diode forward voltage
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
-
-
V
GS
=0V, I
S
=25A
V
DS
=120V, V
GS
=10V
I
D
=20A
V
DD
=75V, I
D
=20A
R
G
=1Ω, V
GS
=10V
-
-
-
-
-
-
-
-
-
-
16
3
60
3
62
9
12
-
-
-
25
100
1.2
A
A
V
32
6
120
6
84
nC
ns
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V,
f=1MHz
-
-
-
2412
247
12
-
-
-
pF
V
GS(th)
R
DS(ON)
I
D
=250uA, V
DS
=V
GS
V
GS
=10V, I
D
=12A
V
GS
=5V, I
D
=10A
1
-
1.5
55
60
3
70
80
V
m
m
BV
DSS
I
DSS
I
GSSF
I
GSSR
I
D
=250uA, V
GS
=0
V
DS
=150V, V
GS
=0V
V
DS
=0V, V
GS
=20V
V
DS
=0V, V
GS
=-20V
150
-
-
-
-
-
-
-
-
1
100
-100
V
uA
nA
nA
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Diode Characteristics and Maximum Ratings
Note:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Pulse test: Pulse width≤300us, Duty cycle≤2%.
3. Guaranteed by design, not subject to production testing.
Rev. date: 05-JUN-13
KSD-T6O044-000
www.auk.co.kr
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