SMN01Z30Q
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BV
DSS
=300V(Min.)
Low C
rss
: C
rss
=3.2pF(Typ.)
Low gate charge : Qg=2.9nC(Typ.)
Low R
DS(on)
: R
DS(on)
=8Ω(Max.)
G
Package Code
SOT-223
D
S
S
SMN01Z30Q
SMN01Z30
SOT-223
PIN Connection
D
D
G
Ordering Information
Type No.
Marking
Marking Diagram
Column 1 : Device Code
SMN01Z30
YWW
Column 2 : Production Information
e.g.) YWW
-. Y : Year Code
-. WW : Week Code
Absolute maximum ratings
(
T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
*
Symbol
V
DSS
V
GSS
I
D
T
C
=25C
T
C
=100C
I
DM
P
D
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
300
20
1.3
0.78
5.2
2.1
1.3
182.6
1.3
0.2
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R
th(J-A)
Typ.
-
Max.
60
Unit
C/W
KSD-T5A005-000
1
SMN01Z30Q
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0V
I
D
=250uA, V
DS
=V
GS
V
DS
=300V, V
GS
=0V
V
DS
=0V, V
GS
=15V
V
GS
=10V, I
D
=650mA
V
DS
=10V, I
D
=650mA
V
GS
=0V, V
DS
=25V
f=1 MHz
Min. Typ. Max.
300
1.5
-
-
-
-
-
-
-
-
-
2.0
-
-
6.9
0.4
101
15
3.2
5
17
21
35
2.9
0.4
0.7
-
2.5
1
10
8
-
130
20
5.0
20
44
52
80
4.5
-
-
Unit
V
V
uA
uA
S
pF
V
DD
=150V, I
D
=1.3A
R
G
=25Ω
-
-
-
-
-
-
ns
V
DS
=240V, V
GS
=10V
I
D
=1.3A
nC
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=1.3A
I
S
=1.3A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
270
0.27
1.3
5.2
1.4
-
-
A
V
ns
uC
Gate to Source Zener Diode
(T
C
=25C unless otherwise noted)
Characteristic
Gate-Source Breakdown Voltage
Symbol
BV
GSO
Test Condition
I
G
=1mA, V
DS
=0V
Min.
20
Typ. Max. Unit
24
-
V
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=180mH, I
AS
=1.3A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25C
③
Pulse Test : Pulse width≤300us, Duty cycle≤2%
④
Essentially independent of operating temperature
KSD-T5A005-000
2
SMN01Z30Q
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
9
8
7
6
5
4
3
Fig. 2 I
D
- V
GS
-
Fig. 3 R
DS(on)
- I
D
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
=
KSD-T5A005-000
3
SMN01Z30Q
Electrical Characteristic Curves
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
0.65
ㅋ
C
C
Fig. 9
`
I
D
- T
C
Fig. 10 Safe Operating Area
*
KSD-T5A005-000
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMN01Z30Q
Fig. 12 Switching Time Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T5A005-000
5
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