SMD Type
N-Channel Enhancement
MOSFET
SI2328DS
(KI2328DS)
SOT-23
MOSFET
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
■
Features
●
V
DS (V)
= 100V
+0.1
2.4
-0.1
1
2
0.95
+0.1
-0.1
0.55
●
R
DS(ON)
＜
250mΩ (V
GS
= 4.5V)
+0.1
1.3
-0.1
●
I
D
= 1.5 A (V
GS
= 10V)
0.4
3
+0.05
0.1
-0.01
+0.1
-0.1
1.9
+0.1
0.97
-0.1
G
1
3
D
+0.1
0.38
-0.1
1.Gate
2.Source
S
2
0-0.1
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Power Dissipation *1
*2
*2
L=0.1mH
Ta=25℃
Ta=70℃
Steady State
Thermal Resistance.Junction-to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
*2 Pulse width limited by maximum junction temperature
tate
*1
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
R
thJA
R
thJF
T
J
T
stg
1.25
0.8
100
170
55
150
-55 to 150
℃
℃/W
1.5
1.2
6
6
1.8
0.73
0.47
mJ
W
5 sec
Steady State
100
±20
1.15
0.92
A
Unit
V
Thermal Resistance.Junction- to-Ambient *1 t≤5 sec
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1
SMD Type
N-Channel Enhancement
MOSFET
SI2328DS
(KI2328DS)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On-State Drain Current *1
Static Drain-Source On-Resistance *1
Forward Transconductance *1
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
R
DS(O
n
)
g
FS
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
S
V
SD
I
S
=1.0A,V
GS
=0V
I
D
=0.2A, V
DS
=50V, ,V
GEN
=10V
R
L
=33Ω,R
G
=6Ω
I
F
= 1.5A, d
I
/d
t
= 100A/μs
V
GS
=10V, V
DS
=50V, I
D
=1.5A
Test Conditions
I
D
=1mA, V
GS
=0V
V
DS
=100V, V
GS
=0V
V
DS
=100V, V
GS
=0V, Ta=70℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
DS
≥
15 V, V
GS
= 10 V
V
GS
=10V, I
D
=1.5A
V
DS
=15V, I
D
=1.5A
0.5
2
6
Min
100
MOSFET
Typ
Max
1
75
±100
4
Unit
V
μA
nA
V
A
mΩ
S
Ω
nC
195
4
250
2.4
3.3
0.47
1.45
7
11
9
10
50
0.8
4
11
17
15
15
100
1.0
1.2
A
V
ns
*1 Pulse test: PW
≤
300us duty cycle≤ 2%.
■
Marking
Marking
D8*
2
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SMD Type
N-Channel Enhancement
MOSFET
SI2328DS
(KI2328DS)
■
Typical Characterisitics
Output Characteristics
12
V
GS
= 10, 9, 8 V
9
I
D
− Drain Current (A)
6 V
6
I
D
−
Drain Current (A)
7 V
12
MOSFET
Transfer Characteristics
9
6
3
3, 2, 1 V
5 V
3
T
C
= 125 C
25 C
4 V
0
−55
C
4
6
8
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
2
V
GS
−
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
)
250
Capacitance
0.5
C
−
Capacitance (pF)
r
DS(on)
−
On-Resistance (
200
C
iss
150
0.4
V
GS
= 10 V
0.3
100
0.2
0.1
50
C
rss
0
20
40
C
oss
0.0
0
3
6
I
D
−
Drain Current (A)
9
12
0
60
80
100
V
DS
−
Drain-to-Source Voltage (V)
Gate Charge
20
V
GS
−
Gate-to-Source Voltage (V)
V
DS
= 50 V
I
D
= 1.5 A
16
2.5
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 1.5 A
2.0
12
r
DS(on)
−
On-Resiistance
(Ω)
(Normalized)
1.5
8
1.0
4
0.5
0
0
1
2
3
4
5
6
Q
g
−
Total Gate Charge (nC)
0.0
−50
−25
0
25
50
75
100
125
150
T
J
−
Junction Temperature ( C)
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3
SMD Type
N-Channel Enhancement
MOSFET
SI2328DS
(KI2328DS)
■
Typical Characterisitics
10
MOSFET
Source-Drain Diode Forward Voltage
0.6
On-Resistance vs. Gate-to-Source Voltage
I
S
−
Source Current (A)
1
T
J
= 150 C
r
DS(on)
−
On-Resistance (
)
0.5
I
D
= 1.5 A
0.4
0.3
0.1
T
J
= 25 C
0.2
0.1
0.01
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
−
Source-to-Drain Voltage (V
)
V
GS
−
Gate-to-Source Voltage (V)
Threshold Voltage
0.6
12
10
I
D
= 250 A
Power (W)
0.0
−0.3
−0.6
−0.9
−1.2
−50
.
Single Pulse Power
0.3
V
GS(th)
Variance (V)
8
T
A
= 25 C
6
4
2
0
0.01
0.1
1
Time (sec)
10
100
600
−25
0
25
50
75
100
125
150
T
J
−
Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
t
1
Notes:
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 176
C/W
t
1
t
2
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
Square Wave Pulse Duration (sec)
3. T
JM
−
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
4
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