SMD Type
N-Channel
MOSFET
SI2312DS-HF
(KI2312DS-HF)
■
Features
●
V
DS (V)
= 20V
●
I
D
= 4.9 A (V
GS
=4.5V)
+0.1
2.4
-0.1
MOSFET
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
●
R
DS(ON)
＜
40mΩ (V
GS
= 2.5V)
●
R
DS(ON)
＜
51mΩ (V
GS
= 1.8V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
G
1
+0.1
1.3
-0.1
●
R
DS(ON)
＜
33mΩ (V
GS
= 4.5V)
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Gate
2.Source
+0.1
0.38
-0.1
0-0.1
3
S
2
D
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Power Dissipation *1
*2
*2
L=0.1mH
Ta=25℃
Ta=70℃
Steady State
Thermal Resistance.Junction-to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
*2 Pulse width limited by maximum junction temperature
*1
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
R
thJA
R
thJF
T
J
T
stg
1.25
0.8
100
166
50
150
-55 to 150
℃
℃/W
4.9
3.9
15
15
11.25
0.75
0.48
mJ
W
5 sec
20
±8
3.77
3.0
A
Steady State
Unit
V
Thermal Resistance.Junction- to-Ambient *1 t≤5 sec
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1
SMD Type
N-Channel
MOSFET
SI2312DS-HF
(KI2312DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On-State Drain Current *1
Static Drain-Source On-Resistance *1
Forward Transconductance *1
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
R
DS(O
n
)
g
FS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
S
V
SD
I
S
=1.0A,V
GS
=0V
I
D
=1.0A, V
DS
=10V, ,V
GEN
=4.5V
R
L
=10Ω,R
G
=6Ω
I
F
= 1.0A, d
I
/d
t
= 100A/μs
V
GS
=4.5V, V
DS
=10V, I
D
=5.0A
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
DS
=20V, V
GS
=0V, Ta=70℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
, I
D
=250μA
V
DS
≥
10 V, V
GS
= 4.5 V
V
GS
=4.5V, I
D
=5.0A
V
GS
=2.5V, I
D
=4.5A
V
GS
=1.8V, I
D
=4.0A
V
DS
=15V, I
D
=5.0A
0.45
15
Min
20
MOSFET
Typ
Max
1
75
±100
0.85
33
40
51
Unit
V
μA
nA
V
A
mΩ
S
40
11.2
1.4
2.2
15
40
48
31
13
0.8
25
60
70
45
25
1.0
1.2
14
nC
ns
A
V
*1 Pulse test: PW
≤
300us duty cycle≤ 2%.
■
Marking
Marking
C2*
F
2
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SMD Type
N-Channel
MOSFET
SI2312DS-HF
(KI2312DS-HF)
■
Typical Characterisitics
15
V
GS
= 4.5 thru 2.0 V
12
Drain Current (A)
Drain Current (A)
12
MOSFET
Ou t p u t Ch ar ac t er i s t i c s
15
Tr an s f er Ch ar ac t er i s t i c s
9
1.5 V
9
6
6
T
C
= 125 C
3
25 C
0
0.0
-55 C
1.0
-
1.5
2.0
I
D
-
3
0.5 V
0
0
1
V
DS
0.15
-
2
3
4
1.0 V
I
D
-
0.5
V
GS
Drain-to-Source Voltage (V)
Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
1500
Capacitance
0.12
C - Capacitance (pF)
)
r
DS(on)
- On-Resistance (
1200
C
iss
900
0.09
V
GS
= 1.8 V
0.06
V
GS
= 2.5 V
600
0.03
V
GS
= 4.5 V
0.00
0
3
6
9
12
15
300
C
oss
C
rss
0
0
4
V
DS
-
8
12
16
20
I
D
- Drain Current (A)
Drain-to-Source Voltage (V)
Gate Charge
8
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 5.0 A
6
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 5.0 A
1.4
r
DS(on)
- On-Resistance (
)
(Normalized)
8
12
16
20
1.2
4
1.0
2
0.8
0
0
4
Q
g
- Total Gate Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
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3
SMD Type
N-Channel
MOSFET
SI2312DS-HF
(KI2312DS-HF)
■
Typical Characterisitics
S o u rc e -D ra i D i d e F o rw a rd V olta g e
n o
20
10
0.20
MOSFET
O n -R e s i ta n c e v s . G a te -to -S o u rc e V olta g e
s
I
D
= 5.0 A
0.15
I
S
- Source Current (A)
1
r
DS(on)
- On-Resistance (
T
J
= 150 C
)
0.10
T
J
= 25 C
0.1
0.05
0.01
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.2
12
10
I
D
= 250 A
Power (W)
-0.0
8
Single Pulse Power
0.1
V
GS(th)
Variance (V)
-0.1
6
T
A
= 25 C
-0.2
4
-0.3
.
2
-0.4
-50
0
-25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
t
1
Notes:
P
DM
0.02
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
thJA
= 166 C/W
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
Square Wave Pulse Duration (sec)
3. T - T
A
= P
DM
Z
thJA(t)
JM
4. Surface Mounted
10
100
600
4
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