SMD Type
N-Channel
MOSFET
SI2304DS-HF
(KI2304DS-HF)
SOT-23-3
MOSFET
Unit: mm
+0.2
2.9
-0.1
+0.1
0.4
-0.1
3
●
V
DS (V)
= 30V
+0.2
2.8
-0.1
●
R
DS(ON)
＜
117mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
190mΩ (V
GS
= 4.5V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.2
1.6
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.2
2
0.55
0.4
■
Features
+0.02
0.15
-0.02
+0.2
1.1
-0.1
+0.1
0.68
-0.1
0-0.1
G
1
3
D
1. Gate
2. Source
3. Drain
S
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1
Pulsed Drain Current *2
Power Dissipation
Ta=25℃
Ta=70℃
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
TJ
Tstg
Rating
30
±20
2.5
2.0
10
1.25
0.8
100
166
150
-55 to 150
W
A
Unit
V
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *3
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on FR4 Board, t
≤
5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
℃/W
℃
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1
SMD Type
N-Channel
MOSFET
SI2304DS-HF
(KI2304DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On-State Drain Currenta *1
Static Drain-Source On-Resistance *1
Forward Transconductance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
I
D(on)
R
DS(O
n
)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gt
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=1.25A,V
GS
=0V
I
D
=1A, V
DS
=15V, ,R
GEN
=6Ω
R
L
=15Ω,VGS=10V
V
GS
=10V, V
DS
=15V, I
D
=2.5A
V
DS
=15V,V
GS
=5V,I
D
=2.5A
V
GS
=0V, V
DS
=15V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=30V, V
GS
=0V, Ta=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250μA
V
DS
≥
4.5 V, V
GS
= 10 V
V
DS
≥
4.5 V, V
GS
= 4.5 V
V
GS
=10V, I
D
=2.5A
V
GS
=4.5V, I
D
=2.0A
V
DS
=4.5V, I
D
=2.5A
1.5
6
4
Min
30
MOSFET
Typ
Max
0.5
10
±100
3
Unit
V
μA
nA
V
A
117
190
4.6
240
110
17
2.4
4.5
0.8
1.0
8
12
17
8
0.77
20
30
35
20
1.25
1.2
4
10
mΩ
S
pF
nC
ns
A
V
*1 Pulse test: PW
≤300u
s duty cycle
≤
2%.
■
Marking
Marking
A4*
F
2
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SMD Type
N-Channel
MOSFET
SI2304DS-HF
(KI2304DS-HF)
■
Typical Characterisitics
10
MOSFET
Output Characteristics
V
GS
= 10 V - 5 V
I D – Drain Current (A)
10
Transfer Characteristics
8
I D – Drain Current (A)
8
6
4V
6
4
4
T
C
= 125 C
25
。
C
–55 C
。
2
0V
2
3V
0
0
。
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
1
2
3
4
V
GS
– Gate-to-Source Voltage (V)
5
0.30
On-Resistance vs. Drain Current
500
Capacitance
r DS(on)– On-Resistance (
Ω
)
0.24
V
GS
= 4.5 V
0.18
C – Capacitance (pF)
400
300
C
iss
200
C
oss
100
C
rss
0.12
V
GS
= 10 V
0.06
0
0
2
4
6
8
10
I
D
– Drain Current (A)
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
0
10
V
DS
= 15 V
I
D
= 2.5 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
1.8
1.6
r DS(on)– On-Resistance (
Ω
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
–50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
8
6
4
2
0
0
1
2
3
4
5
Q
g
– Total Gate Charge (nC)
–25
0
25
50
75
100
125
150
C)
T
J
– Junction Temperature (
。
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3
SMD Type
N-Channel
MOSFET
SI2304DS-HF
(KI2304DS-HF)
■
Typical Characterisitics
10
MOSFET
Source-Drain Diode Forward Voltage
0.6
0.5
r DS(on)– On-Resistance (
Ω
)
On-Resistance vs. Gate-to-Source Voltage
I S – Source Current (A)
0.4
0.3
0.2
0.1
0
I
D
= 2.5 A
T
J
= 150
。
C
T
J
= 25
。
C
1
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
0.3
0.2
0.1
V GS(th) Variance (V)
–0.0
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–50
–25
0
Threshold Voltage
10
Single Pulse Power
8
I
D
= 250 A
Power (W)
6
T
C
= 25
。
C
Single Pulse
4
2
.
25
50
75
100
125
150
0
0.01
0.10
1.00
Time (sec)
10.00
T
J
– Temperature (
。
C)
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
–3
10
–2
10
–1
1
10
30
0.1
0.01
10
–4
Square Wave Pulse Duration (sec)
4
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