DIP Type
N-Channel Enhancement
MOSFET
NDT6N70P
TO-251
MOSFET
■
Features
●
V
DS (V)
= 700V
●
I
D
= 4.8A (V
GS
= 10V)
●
R
DS(ON)
＜
1.8Ω (V
GS
= 10V)
●
Low gate charge ( typical 16nC)
D
1
2 3
1
G
S
2
3
Unit: mm
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
(Note.1)
(Note.1)
Tc=25℃
Tc=100℃
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
R
thJA
R
thJC
R
thJS
TL
TJ
Tstg
Tc=25℃
Derate above 25℃
(Note.3)
Rating
700
±30
4.8
3.0
20
4.8
9.5
150
95
0.76
4.5
110
1.3
50
300
150
-55 to 150
℃
℃/W
mJ
W
W/℃
V/ns
A
Unit
V
Repetitive Avalanche Energy (Note.1)
Single Pulsed Avalanche Energy (Note.2)
Power Dissipation
Peak Diode Recovery dv/dt
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Thermal Resistance.Case-to-Sink Typ
Maximum lead Temperature for soldering purpose,
1/8 from case for 5 seconds
Junction Temperature
Storage Temperature Range
Note.1: Repetitive Rating :Pulse width limited by maximum junction temperature
Note.2: L=8mH,I
AS
=6.0A,V
DD
=50V,R
G
=25Ω,Starting T
J
=25℃
Note.3; I
SD
≤4.8A,di/dt≤200A/us,V
DD
≤BV
DSS
,Starting T
J
=25℃
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1
DIP Type
N-Channel Enhancement
MOSFET
NDT6N70P
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Maximum Pullsed Drain-Source Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
I
SM
V
SD
I
S
= 6.0A, d
I
/d
t
= 100A/μs V
GS
=0V (Note.1)
Maximum Continuous Drain-Source Diode
Forward Current
Maximum Pulsed Drain-Source Diode Forward
Current
I
S
=4.8A,V
GS
=0
I
D
=6.0A, V
DS
=350V, ,R
GEN
=25Ω (Note.1)
V
GS
=10V, V
DS
=560V, I
D
=6.0A (Note.1)
V
GS
=0V, V
DS
=25V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=700V, V
GS
=0V
V
DS
=560V, V
GS
=0V, Tc=125℃
V
DS
=0V, V
GS
=±30V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V, I
D
=2.4A
2.0
Min
700
MOSFET
Typ
Max
1
10
±100
4.0
Unit
V
μA
nA
V
Ω
pF
1.8
650
95
10
16
4.5
5.0
30
40
80
40
280
2.0
2.3
nC
ns
uC
4.8
A
20
1.4
V
Note.1: Pulse Test:Pulse width≤300us,Duty cycle≤2%
2
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DIP Type
N-Channel Enhancement
MOSFET
NDT6N70P
■
Typical Characterisitics
Top :
V
GS
15.0 V
15 0
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
MOSFET
10
1
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
150 C
25 C
10
0
o
10
0
o
-55 C
o
10
-1
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25
℃
-1
※
Notes :
1. V
DS
= 40V
μ
2. 250μ s Pulse Test
10
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characterist
ics
Figure 2. Transfer Characte ir st
ics
4.5
4.0
10
1
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
]
10
0
V
GS
= 20V
150
℃
25
℃
※
Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
※
Note : T
J
= 25
℃
0
5
10
15
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
1400
1200
1000
800
600
400
200
0
-1
10
V
GS
, Gate-Source Voltage [V]
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
10
V
DS
= 100V
V
DS
= 250V
Capacitance [pF]
C
iss
C
oss
8
V
DS
= 400V
6
4
C
rss
2
※
Note : I
D
= 6A
0
10
0
10
1
0
5
10
15
20
V
DS
, Drain-Source Voltage [ ]
g [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
DIP Type
N-Channel Enhancement
MOSFET
NDT6N70P
■
Typical Characterisitics
1.2
3.0
MOSFET
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
e
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 2.4 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
0.8
08
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
2
5
Operation in This Area
is Limited by R
DS(on)
4
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
3
10
1
10
0
100us
1 ms
10 ms
100 ms
DC
3
2
10
-1
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
1
10
-2
10
0
10
1
10
2
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
.
Figure 10. Maximum Drain C urrent
vs Case Temperature
10
0
D=0.5
ponse
Z
θ
JC
Thermal Resp
(t),
0.2
0.1
10
-1
0.05
0.02
0.01
single pulse
※
Notes :
1. Z
θ
JC
(t) = 1.3
℃
/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
P
DM
t
1
10
-3
10
-2
t
2
10
0
10
-5
10
-4
10
-2
10
-1
10
1
t
1
, Square Wave Pulse Duration [sec]
Figure 10. Maximum Drain Current
vs Case Temperature
4
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