SMD Type
N-Channel Enhancement
MOSFET
NDT35N06
TO-252
●
V
DS (V)
= 60V
●
I
D
= 35 A
●
R
DS(ON)
＜
23mΩ (V
GS
= 10V)
●
R
DS(ON)
＜
33mΩ (V
GS
= 4.5V)
●
R
DS(ON)
＜
37mΩ (V
GS
= 4V)
1
2,4
+ 0.2
9.70
- 0.2
+ 0.15
0.50
- 0.15
MOSFET
Unit: mm
+ 0.15
1.50
- 0.15
■
Features
+
6.50
- 0.15
0.15
+
5.30
- 0.2
0.2
+
2.30
- 0.1
0.1
0.50
+ 0.8
- 0.7
4
+ 0.15
5.55
- 0.15
+0.1
0.80
-0.1
0.127
max
+ 0.28
1.50
- 0.1
2.65
+0.25
-0.1
2.3
4.60
+ 0.15
- 0.15
+
0.60
- 0.1
0.1
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note.1)
Avalanche Current (Note.2)
Avalanche Energy (Single Pulse) (Note.3)
Power Dissipation
Tc=25°C
Junction Temperature
Storage Temperature Range
Note.1 :PW
≤
10 us, duty cycle
≤
1%
Note.2 :L≤100μH, Single pulse
Note.3 :V
DD
=10V, L=100μH, I
AV
=18A
Symbol
V
DS
V
GS
I
D
I
DP
I
AV
E
AS
P
D
T
J
Tstg
Rating
60
±20
35
105
18
19
40
150
-55 to 150
mJ
W
℃
A
Unit
V
3
.8
0
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1
SMD Type
N-Channel Enhancement
MOSFET
NDT35N06
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-Source On-Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(off)
|Y
fs
|
R
DS(O
n
)1
R
DS(O
n
)2
R
DS(O
n
)3
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=35A,V
GS
=0V
See specified Test Circuit
V
GS
=10V, V
DS
=30V, I
D
=35A
V
GS
=0V, V
DS
=20V, f=1MHz
Test Conditions
I
D
=1mA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=0V, V
GS
=±16V
V
DS
=10V , I
D
=1mA
V
DS
=10V , I
D
=18A
V
GS
=10V, I
D
=18A
V
GS
=4.5V, I
D
=9A
V
GS
=4.0V, I
D
=5A
1.2
Min
60
MOSFET
Typ
Max
1
±10
2.6
Unit
V
μA
V
S
35
17
23
25
1820
150
100
34.5
6.5
6.8
16
110
125
87
35
0.96
1.2
23
33
37
mΩ
pF
nC
ns
A
V
Switching Time Test Circuit:
10V
0V
VIN
VDD=30V
ID=18A
RL=1.67Ω
D
VOUT
VIN
PW=10μ
s
D.C.≤
1%
G
P.G
50Ω
S
2
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SMD Type
N-Channel Enhancement
MOSFET
NDT35N06
■
Typical Characterisitics
35
30
MOSFET
Tc=
--25
°
C
75
°
C
1.5
2.0
6.0V
Drain Current, ID -- A
4.5
V
50
8.0V
25
20
15
10
5
0
3.0V
Drain Current, ID -- A
40
10.0
V
30
16.0
V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0
0.5
1.0
25
°
C
VGS=2.5V
10
2.5
3.0
--25
°
C
Tc=
7
20
5
°
C
3.5
4.0
4.5
25
°
C
5.0
5.5
150
1.4
Tc=25
°
C
Single pulse
ID -- VDS
4.0
3.5V
60
ID -- VGS
VDS=10V
Single pulse
Drain-to-Source Voltage, VDS -- V
55
V
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
55
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
45
40
35
30
25
20
15
10
5
0
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
Tc=25
°
C
Single pulse
RDS(on) -- Tc
50
45
40
35
30
25
20
15
10
5
0
--50
--25
0
25
50
75
Single pulse
ID=5A
9A
18A
=5A
, ID
4.0V
S=
VG
=9A
, ID
4.5V
18A
S=
VG
I D=
.0V,
=10
VGS
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16
100
125
Gate-to-Source Voltage, VGS -- V
7
|
y
fs
|
-- ID
C
°
Case Temperature, Tc --
°
C
100
7
5
3
2
Forward Transfer Admittance,
|
y
fs
|
-- S
5
3
2
10
7
5
3
2
1.0
VDS=10V
Single pulse
VGS=0V
Single pulse
IS -- VSD
=
Tc
--2
C
5
°
Source Current, IS -- A
25
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
7
5
0.1
2
3
5
Drain Current, ID -- A
7 1.0
2
3
5
7 10
2
3
5
0.01
7
5
3
2
0.001
0
0.2
0.4
Tc=
7
5
°
C
25
°
C
--25
°
C
0.6
0.8
C
°
75
1.0
1.2
Diode Forward Voltage, VSD -- V
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3
SMD Type
N-Channel Enhancement
MOSFET
NDT35N06
■
Typical Characterisitics
SW Time -- ID
7
5
MOSFET
VDD=30V
VGS=10V
5
3
2
Ciss, Coss, Crss -- VDS
Ciss
f=1MHz
Switching Time, SW Time -- ns
3
Ciss, Coss, Crss -- pF
2
100
7
5
3
2
10
7
0.1
2
3
5 7 1.0
td(off)
1000
7
5
3
2
tf
tr
td(on)
Coss
100
7
5
Crss
0
10
20
30
40
50
60
2
3
Drain Current, ID -- A
5 7 10
2
3
5 7 100
Drain-to-Source Voltage, VDS -- V
3
2
100
7
5
10
9
Gate-to-Source Voltage, VGS -- V
VDS=30V
ID=35A
VGS -- Qg
ASO
IDP=105A
PW≤ s
10μ
8
Drain Current, ID -- A
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
3
2
10
7
5
3
2
1.0
7
5
3
2
ID=35A
10
m
10
s
10
0
μ
s
s
1m
10
μ
s
0m
s
Operation in this area
is limited by RDS(on).
DC
op
er
ati
on
.
35
40
Total Gate Charge, Qg -- nC
45
0.1
0.1
Tc=25
°
C
Single pulse
2
3
Drain-to-Source Voltage, V
5 7 1.0
2
3
5 7 10
2
3
PD -- Tc
Avalanche Energy derating factor -- %
120
EAS -- Ta
DS
-- V
5 7 100
Allowable Power Dissipation, PD -- W
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Case Temperature, Tc --
°
C
Ambient Temperature, Ta --
°
C
4
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