PMEG2005AELD
20 V, 0.5 A low V
F
MEGA Schottky barrier rectifier
Rev. 1 — 10 May 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra
small Surface-Mounted Device (SMD) plastic package with visible and solderable side
pads.
1.2 Features and benefits
Forward current: I
F
≤
0.5 A
Reverse voltage: V
R
≤
20 V
Low forward voltage: V
F
≤
440 mV
Ultra small and leadless SMD plastic
package
AEC-Q101 qualified
Solderable side pads
Package height typ. 0.37 mm
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Ultra high-speed switching
1.4 Quick reference data
Table 1.
I
F(AV)
Quick reference data
Conditions
square wave;
δ
= 0.5; f = 20 kHz
T
amb
≤
85
°C
T
sp
≤
130
°C
I
R
V
R
V
F
[1]
[2]
[1]
Symbol Parameter
average forward
current
Min
-
-
-
-
[2]
Typ
-
-
300
-
365
Max
0.5
0.5
600
20
440
Unit
A
A
μA
V
mV
reverse current
reverse voltage
forward voltage
V
R
= 10 V
I
F
= 500 mA
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm
2
.
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG2005AELD
20 V, 0.5 A low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG2005AELD
-
Description
leadless ultra small plastic package; 2 terminals;
body 1
×
0.6
×
0.4 mm
Version
SOD882D
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
1001 0000
Type number
PMEG2005AELD
[1]
For SOD882D binary marking code description, see
Figure 1.
4.1 Binary marking code description
CATHODE BAR
READING DIRECTION
VENDOR CODE
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac477
Fig 1.
SOD882D binary marking code description
PMEG2005AELD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 May 2011
2 of 14
NXP Semiconductors
PMEG2005AELD
20 V, 0.5 A low V
F
MEGA Schottky barrier rectifier
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
85
°C
T
sp
≤
130
°C
I
FRM
I
FSM
P
tot
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
t
p
≤
1 ms;
δ ≤
0.25
square wave; t
p
= 8 ms
T
amb
≤
25
°C
[2]
[1]
Conditions
Min
-
Max
20
Unit
V
-
-
-
-
-
-
-
-
−55
−65
0.5
0.5
2.5
3
340
660
1000
150
+150
+150
A
A
A
A
mW
mW
mW
°C
°C
°C
[3]
[1]
[4]
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
junction temperature
ambient temperature
storage temperature
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
PMEG2005AELD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 May 2011
3 of 14
NXP Semiconductors
PMEG2005AELD
20 V, 0.5 A low V
F
MEGA Schottky barrier rectifier
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[1][3]
[1][4]
Min
-
-
-
-
Typ
-
-
-
-
Max
370
190
125
50
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance from
junction to solder point
[5]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
10
3
006aac557
duty cycle =
Z
th(j-a)
(K/W)
1
0.75
0.5
0.33
10
2
0.25
0.1
0.2
0.05
0
0.02
0.01
10
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2005AELD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 May 2011
4 of 14
NXP Semiconductors
PMEG2005AELD
20 V, 0.5 A low V
F
MEGA Schottky barrier rectifier
10
3
006aac558
Z
th(j-a)
(K/W)
duty cycle =
1
10
2
0.5
0.25
0.1
0
0.05
0.02
0.01
0.75
0.33
0.2
10
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 3.
10
3
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac559
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.75
0.5
0.33
0.1
0.05
0.02
0.01
0
0.25
0.2
10
10
–3
10
–2
10
–1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG2005AELD
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 10 May 2011
5 of 14
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