CMOS STATIC RAM
16K (16K x 1-BIT)
Integrated Device Technology, Inc.
IDT6167SA
IDT6167LA
FEATURES:
• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45/55/70/85/100ns (max.)
— Commercial: 15/20/25/35ns (max.)
• Low power consumption
• Battery backup operation — 2V data retention voltage
(IDT6167LA only)
• Available in 20-pin CERDIP and Plastic DIP, 20-pin
CERPACK, 20-pin SOJ and 20-pin leadless chip carrier
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle soft-
error rates
• Separate data input and output
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The lDT6167 is a 16,384-bit high-speed static RAM orga-
nized as 16K x 1. The part is fabricated using IDT’s high-
performance, high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also
offers a reduced power standby mode. When
CS
goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as
CS
remains HIGH. This capability provides
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compat-
ible and operate from a single 5V supply, thus simplifying
system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil
Plastic DIP or CERDIP, Plastic 20-pin SOJ, 20-pin CERPACK
and 20-pin leadless chip carrier, providing high board-level
packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A
0
V
CC
GND
ADDRESS
DECODE
16,384-BIT
MEMORY ARRAY
A
13
D
IN
I/O CONTROL
D
OUT
CS
WE
CONTROL
LOGIC
2981 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1994
Integrated Device Technology, Inc.
MAY 1994
5.1
DSC-1007/4
1
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
A
0
A
1
A
2
A
3
A
4
A
5
A
6
D
OUT
1
2
3
4
5
6
7
8
9
10
P20-1,
D20-1,
E20-1,
&
S020-1
20
19
18
17
16
15
14
13
12
11
V
CC
A
13
A
12
A
11
A
10
A
9
A
8
TRUTH TABLE
(1)
Mode
Standby
Read
Write
CS
H
L
L
WE
X
H
L
Output
High-Z
DATA
OUT
High-Z
Power
Standby
Active
Active
2981 tbl 02
NOTE:
1. H = V
IH
, L = V
IL
, X = Don't Care.
WE
GND
V
CC
20
A
7
D
IN
CS
2981 drw 02
2
1
A
13
19
18
17
INDEX
A
1
A
0
A
2
DIP/SOIC/CERPACK/SOJ
TOP VIEW
3
4
5
6
7
8
9
10
11
12
A
12
A
11
A
10
A
9
A
8
A
7
A
3
A
4
PIN DESCRIPTIONS
A
0
–A
13
Address Inputs
Chip Select
Write Enable
Power
DATA
IN
DATA
OUT
Ground
2981 tbl 01
L20-1
16
15
14
13
A
5
A
6
D
OUT
CS
WE
V
CC
D
IN
D
OUT
GND
GND
CS
D
IN
WE
2981 drw 03
LCC
TOP VIEW
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
V
CC
GND
V
IH
V
IL
Parameter
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max. Unit
5.5
0
6.0
0.8
V
V
V
V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
Rating
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
Power Dissipation
DC Output
Current
Com’l.
–0.5 to +7.0
Mil.
–0.5 to +7.0
Unit
V
T
A
T
BIAS
T
STG
P
T
I
OUT
0 to +70
–55 to +125
–55 to +125
1.0
50
–55 to +125
–65 to +135
–65 to +150
1.0
50
°C
°C
°C
W
mA
NOTE:
2981 tbl 05
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Military
Commercial
Temperature
–55°C to +125°C
0°C to +70°C
GND
0V
0V
V
CC
5V
±
10%
5V
±
10%
2981 tbl 06
CAPACITANCE
(T
A
= +25°C, f = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max. Unit
7
7
pF
pF
NOTE:
2981 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
NOTE:
2981 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
5.1
2
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
6167SA/LA15
Symbol
I
CC1
Parameter
Operating Power Supply Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = 0
(3)
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
Standby Power Supply Current
(TTL Level)
CS
≥
V
IH
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
Full Standby Power Supply Current
(CMOS Level)
CS
≥
V
HC,
V
CC
= Max.
V
IN
≥
V
HC
or V
IN
≤
V
LC
, f = 0
(3)
Power Com’l.
SA
LA
SA
LA
SA
LA
SA
LA
90
55
120
100
50
35
5
0.9
Mil.
90
60
130
110
50
35
10
2
6167SA/LA20
Com’l.
90
55
100
80
35
30
5
0.05
Mil.
90
60
110
85
35
30
10
2
6167SA/LA25
Com’l.
90
55
100
70
35
25
5
0.05
Mil.
90
60
100
75
35
25
10
0.9
mA
mA
mA
Unit
mA
I
CC2
I
SB
I
SB1
DC ELECTRICAL CHARACTERISTICS
(1)
(CONTINUED)
(V
CC
= 5.0V
±
10%, V
LC
= 0.2V, V
HC
= V
CC
– 0.2V)
6167SA/LA35 6167SA/LA45
(2)
6167SA/LA55
(2)
6167SA/LA70
(2)
Symbol
I
CC1
Parameter
Operating Power Supply Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = 0
(3)
Dynamic Operating Current
CS
≤
V
IL
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
Standby Power Supply Current
(TTL Level)
CS
≥
V
IH
, Outputs Open,
V
CC
= Max., f = f
MAX(3)
Full Standby Power Supply Current
(CMOS Level)
CS
≥
V
HC,
V
CC
= Max.
V
IN
≥
V
HC
or V
IN
≤
V
LC
, f = 0
(3)
Power Com’l.
SA
LA
SA
LA
SA
LA
SA
LA
90
55
100
65
35
20
5
0.05
Mil.
90
60
100
70
35
20
10
0.9
Com’l.
—
—
—
—
—
—
—
—
Mil.
90
60
100
65
35
20
10
0.9
Com’l.
—
—
—
—
—
—
—
—
Mil.
90
60
100
60
35
20
10
0.9
Com’l.
—
—
—
—
—
—
—
—
Mil.
90
60
100
60
35
15
10
0.9
2980 tbl 07
Unit
mA
I
CC2
mA
I
SB
mA
I
SB1
mA
NOTES:
1. All values are maximum guaranteed values.
2. –55°C to +125°C temperature range only. Also available; 85ns and 100ns Military devices.
3. f
MAX
= 1/t
RC
, only address inputs cycling at f
MAX
. f = 0 means no Address inputs change.
5.1
3
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
V
CC
= 5.0V
±
10%
IDT6167SA
Symbol
|I
LI
|
Parameter
Input Leakage Current
Test Condition
V
CC
= Max.,
V
IN
= GND to V
CC
|I
LO
|
Output Leakage Current
V
CC
= Max.,
CS
= V
IH,
V
OUT
= GND to V
CC
V
OL
V
OH
Output Low Voltage
Output High Voltage
I
OL
= 8mA, V
CC
= Min.
I
OH
= –4mA, V
CC
= Min.
MIL
COM’L
MIL
COM’L
Min.
—
—
—
—
—
2.4
Max.
10
5
10
5
0.4
—
IDT6167LA
Min.
—
—
—
—
—
2.4
Max.
5
2
5
2
0.4
—
V
V
µA
Unit
µA
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) V
LC
= 0.2V, V
HC
= V
CC
– 0.2V
Typ.
(1)
V
CC
@
Symbol
V
DR
I
CCDR
t
CDR
t
R(3)
|I
LI
|
(3)
Parameter
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Input Leakage Current
—
Test Condition
—
MIL.
COM’L.
Min.
2.0
—
—
0
t
RC(2)
—
2.0v
—
0.5
0.5
—
—
—
3.0V
—
1.0
1.0
—
—
—
2.0V
—
200
20
—
—
2
Max.
V
CC
@
3.0V
—
300
30
—
—
2
ns
ns
µA
2981 tbl 09
Unit
V
µA
CS
≥
V
HC
VIN
≥
V
HC
or
≤
V
LC
NOTES:
1. T
A
= +25°C.
2. t
RC
= Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
LOW V
CC
DATA RETENTION WAVEFORM
DATA
RETENTION
MODE
V
CC
4.5V
V
DR
≥
2V
t
CDR
t
R
V
DR
4.5V
CS
V
IH
V
IH
2981 drw 04
5.1
4
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
AC Test Load
5V
GND to 3.0V
5ns
1.5V
1.5V
See Figures 1 and 2
2979 tbl 09
5V
480
Ω
480
Ω
DATA
OUT
255
Ω
30pF*
DATA
OUT
255
Ω
5pF*
2981 drw 06
2981 drw 05
Figure 1. AC Test Load
*Includes scope and jig.
Figure 2. AC Test Load
(for t
CLZ
, t
CHZ
, t
WHZ
and t
OW
)
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
6167SA15
6167LA15
Symbol
Read Cycle
t
RC
t
AA
t
ACS
t
CLZ(2)
t
CHZ
t
OH
t
PU(2)
t
PD(2)
t
WC
t
CW
t
AW
t
AS
t
WP
t
WR
t
DW
t
DH
t
WHZ(2)
t
OW(2)
(2)
6167SA20/25 6167SA35/45
(1)
6167SA55
(1)
/70
(1)
6167LA20/25 6167LA35/45
(1)
6167LA55
(1)
/70
(1)
Min. Max.
20/25
—
—
5/5
—
5/5
0/0
—
20/20
15/20
15/20
0/0
15/20
0/0
12/15
0/0
—
0/0
—
20/25
20/25
—
10/10
—
—
20/25
—
—
—
—
—
—
—
—
8/8
—
Min.
35/45
—
—
5/5
—
5/5
0/0
—
30/45
30/40
30/40
0/0
30/30
0/0
17/20
0/0
—
0/0
Max.
—
35/45
35/45
—
15/30
—
—
35/45
—
—
—
—
—
—
—
—
15/30
—
Min.
55/70
—
—
5/5
—
5/5
0/0
—
55/70
45/55
45/55
0/0
35/40
0/0
25/30
0/0
—
0/0
Max.
—
55/70
55/70
—
40/40
—
—
55/70
—
—
—
—
—
—
—
—
40/40
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2981 tbl 11
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Deselect to Output in Low-Z
Chip Select to Output in High-Z
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
Write Cycle Time
Chip Select to End-of-Write
Address Valid to End-of-Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Data Hold Time
Write Enable to Output in High-Z
Output Active from End-of-Write
Min.
15
—
—
3
—
3
0
—
15
15
15
0
13
0
10
0
—
0
Max.
—
15
15
—
10
—
—
15
—
—
—
—
—
—
—
—
7
—
Write Cycle
NOTES:
1. –55°C to +125°C temperature range only. Also available: 85ns and 100ns Military devices.
2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
5.1
5
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