SMD Type
N-Channel 30-V (D-S) MOSFET
MOSFET
IC
SI2306DS
(KI2306DS)
SOT-23-3
Unit: mm
+0.2
2.9
-0.1
+0.1
0.4
-0.1
■
Features
+0.2
2.8
-0.1
3
●
V
DS (V)
= 30V
●
R
DS(ON)
＜
57mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
94 mΩ (V
GS
=-4.5V)
D
+0.2
1.6
-0.1
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.1
1.9
-0.2
+0.02
0.15
-0.02
G
+0.1
0.68
-0.1
+0.2
1.1
-0.1
1. Gate
S
0-0.1
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
*1
Ta=25℃
Ta=70℃
t
≤
5 sec
Steady State
Junction Temperature
Storage Temperature Range
*1.Surface Mounted on FR4 Board,.t
≤
5 sec
Tj=150℃ *1
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
TJ
Tstg
Rating
30
±20
3.5
2.8
16
1.25
0.8
100
130
150
-55 to 150
W
℃/W
A
Unit
V
Thermal Resistance.Junction- to-Ambient
℃
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1
SMD Type
SMD Type
IC
MOSFET
SI2306DS
(KI2306DS)
Electrical Characteristics Ta = 25
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
Drain-source on-state resistance
Forward transconductance
Diode forward voltage
gate charge *
Total gate charge *
Gate-source charge *
Gate-drain charge *
Gate Resistance
Input capacitance *
Output capacitance *
Reverse transfer capacitance *
Turn-on time
Turn-off time
* Pulse test: PW
300 u s duty cycle
2%.
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Q
g
Q
gt
Q
gs
Q
gd
Rg
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15V , R
L
= 15
Ω
,
I
D
= 1A , V
GEN
=-10V , R
G
= 6
Ω
V
DS
= 15V ,V
GS
= 0 , f = 1 MHz
0.5
555
120
60
9
7.5
17
5.2
20
18
35
12
ns
pF
V
DS
= 15V ,V
GS
= 10 V , I
D
= 3.5 A
Testconditi ons
V
DS
= V
GS
, I
D
= 250 uA
V
DS
= 0 V, V
GS
=
20 V
V
DS
= 30V, V
GS
= 0 V
V
DS
=30V, V
GS
= 0 V, T
J
= 55
V
DS
V
DS
4.5 V, V
GS
= 10 V
4.5 V, V
GS
= 4.5 V
6
4
0.046 0.057
0.070 0.094
6.9
0.8
4.2
8.5
1.9
1.35
2.4
Ω
Min
30
1
Typ
Max
3
100
0.5
10
Unit
V
nA
uA
A
Ω
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 uA
V
GS
= 10 V, I
D
= 3.5 A
V
GS
=4.5 V, I
D
=2.8 A
V
DS
=4.5 V, I
D
= 3.5 A
I
S
= 1.25 A, V
GS
= 0 V
V
DS
= 15V ,V
GS
=5V , I
D
= 3.5 A
S
1.2
7
20
nC
V
nC
Marking
Marking
A6*
2
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SMD Type
SI2306DS
■
Typical Characteristics
Ou t p u t Ch ar ac t er i s t i c s
16
16
IC
MOSFET
(KI2306DS)
Tr an s f er Ch ar ac t er i s t i c s
12
I
D
- Drain Current (A)
V
GS
= 10 thru 5 V
I
D
- Drain Current (A)
12
8
4 V
8
T
C
= 125 C
4
25 C
- 55 C
0
4
3 thru 1 V
0
0
2
4
6
8
10
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
0.5
On-Resistance vs. Drain Current
800
700
Capacitance
)
0.4
C - Capacitance (pF)
600
500
400
300
200
V
GS
= 10 V
0.0
0
4
8
I
D
- Drain Current (A)
12
16
100
0
0
C
rss
6
12
C
oss
C
iss
r
DS(on)
- On-Resistance (
0.3
0.2
V
GS
= 4.5 V
0.1
18
24
30
V
DS
- Drain-to-Source Voltage (V)
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15V
I
D
= 3.5 A
Gate Charge
1.6
On-Resistance vs. Junction T emperature
V
GS
= 10 V
I
D
= 3.5 A
8
r
DS(on)
- On-Resistance (
)
(Normalized)
4
6
8
10
1.4
6
1.2
4
1.0
2
0.8
0
0
2
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
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3
SMD Type
SMD Type
SI2306DS
Source-Drain Diode Forward Voltage
10
IC
MOSFET
(KI2306DS)
0.5
On-Resistance vs. Gate-to-Source
Voltage
I
S
- Source Current (A)
r
DS(on)
- On-Resistance (
)
T
J
= 150 C
0.4
0.3
0.2
I
D
= 3.5 A
0.1
T
J
= 25 C
1
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Threshold V oltage
0.4
I
D
= 250 A
12
10
Single Pulse Power
0.2
V
GS(th)
Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
8
Power (W)
6
T
A
= 25 C
4
2
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
500
T
J
- Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2.Per Unit Base = R
thJA
= 130 C/W
3. T - T
A
= P
DM
Z
thJA(t)
JM
4. Surface Mounted
0.01
10
-4
Single Pulse
10
-3
10
-2
10
-1
1
10
100
500
Square Wave Pulse Duration (sec)
4
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