SMD Type
P-Channel Enhancement
MOSFET
SI2303DS
■
Features
●
V
DS (V)
=-30V
●
R
DS(ON)
＜
200mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
380mΩ (V
GS
=-4.5V)
+0.1
2.4
-0.1
+0.1
1.3
-0.1
MOSFET
(KI2303DS)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
G
1
0.97
3
S
2
D
+0.1
0.38
-0.1
+0.1
-0.1
1.Gate
2.Source
0-0.1
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient
(surface mounted on FR4 board)
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
T
stg
Rating
-30
±20
-1.7
-1.4
-10
1.25
0.8
100
166
150
-55 to 150
W
A
Unit
V
℃/W
℃
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1
SMD Type
P-Channel Enhancement
MOSFET
SI2303DS
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On state drain current *1
Forward Transconductance *1
Input Capacitance *2
Output Capacitance *2
Reverse Transfer Capacitance *2
Total Gate Charge *2
Gate Source Charge *2
Gate Drain Charge *2
Turn-On DelayTime *3
Turn-On Rise Time *3
Turn-Off DelayTime *3
Turn-Off Fall Time *3
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=-1.25A,V
GS
=0V
V
GS
=-10V, V
DS
=-15V, R
L
=15Ω,R
GEN
=6Ω
I
D
=-1.0A
V
GS
=-10V, V
DS
=-4.5V, I
D
=-1.7A
V
GS
=0V, V
DS
=-15V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
DS
=-30V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-1.7A
V
GS
=-4.5V, I
D
=-1.3A
V
GS
=-10V, V
DS≥
-5V
V
DS
=-10V, I
D
=-1.7A
-6
-1.0
Min
-30
MOSFET
(KI2303DS)
Typ
Max
-1
-10
±100
-3.0
200
380
Unit
V
μA
nA
V
mΩ
A
2.4
226
87
19
5.8
0.8
1.5
9.0
9.0
18
6.0
-0.8
20
20
35
20
-1.25
-1.2
10
S
pF
nC
ns
A
V
*1 Pulse test: PW
≤
300us duty cycle≤ 2%.
*2 For DESIGN AID ONLY, not subject to production testing.
*3 Switching time is essentially independent of operating temperature.
■
Marking
Marking
A3*
2
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SMD Type
P-Channel Enhancement
MOSFET
SI2303DS
■
Typical Characterisitics
10
MOSFET
(KI2303DS)
Transfer Characteristics
T
C
= –55
。
C
25
。
C
125
。
C
Output Characteristics
10
8
I
D
– Drain Current (A)
V
GS
= 10 thru 6 V
I
D
– Drain Current (A)
5V
8
6
6
4
4V
4
2
3V
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
2
0
0
1
2
3
4
5
6
7
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.8
500
Capacitance
r
DS(on)
– On-Resistance (
Ω
)
V
GS
= 4.5 V
0.4
V
GS
= 10 V
0.2
C – Capacitance (pF)
0.6
400
300
C
iss
200
C
oss
100
C
rss
0
0
2
4
6
8
10
I
D
– Drain Current (A)
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
V
DS
= 15 V
I
D
= 1.7 A
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
–50
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 1.7 A
6
4
2
0
0
1
2
3
4
5
6
Q
g
– Total Gate Charge (nC)
0
50
100
150
T
J
– Junction Temperature (
。
C)
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3
SMD Type
P-Channel Enhancement
MOSFET
SI2303DS
■
Typical Characterisitics
10
MOSFET
(KI2303DS)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1.0
T
J
= 150
。
C
r
DS(on)
– On-Resistance (
Ω
)
I
S
– Source Current (A)
0.8
0.6
I
D
= 1.7 A
0.4
。
T
J
= 25 C
0.2
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
0.5
0.4
V
GS(th)
Variance (V)
0.3
0.2
Threshold Voltage
10
Single Pulse Power
8
Power (W)
6
T
C
= 25
。
C
Single Pulse
I
D
= 250 A
0.1
0.0
4
2
–0.1
–0.2
–50
.
0
50
T
J
– Temperature (
。
C)
100
150
0
0.01
0.10
Time (sec)
1.00
10.00
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
–3
10
–2
10
–1
1
10
30
0.1
0.01
10
–4
Square Wave Pulse Duration (sec)
4
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