SMD Type
P-Channel
MOSFET
SI2301DS-HF
(KI2301DS-HF)
MOSFET
■
Features
●
V
DS (V)
=-20V
●
R
DS(ON)
＜
130mΩ (V
GS
=-4.5V)
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
1.3
-0.1
●
R
DS(ON)
＜
190mΩ (V
GS
=-2.5V)
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Gate
2.Source
+0.1
0.38
-0.1
G
1
0-0.1
3
S
2
D
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1
Pulsed Drain Current *2
Power Dissipation *1
Ta=25℃
Ta=70℃
Thermal Resistance.Junction- to-Ambient *1
Thermal Resistance.Junction- to-Ambient *3
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on FR4 Board, t
≤
5 sec.
*2 Pulse width limited by maximum junction temperature.
*3 Surface Mounted on FR4 Board.
Ta=25℃
Ta=70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
T
stg
Rating
-20
±8
-2.3
-1.5
-10
1.25
0.8
100
166
150
-55 to 150
W
A
Unit
V
℃/W
℃
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1
SMD Type
P-Channel
MOSFET
SI2301DS-HF
(KI2301DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On state drain current *1
Forward Transconductance *1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
SD
I
S
=-1.6A,V
GS
=0V
V
GEN
=-4.5V, V
DS
=-6V, R
L
=6Ω,R
G
=6Ω
I
D
=1.0A *3
V
GS
=-4.5V, V
DS
=-6V, I
D
=-2.8A *2
V
GS
=0V, V
DS
=-6V, f=1MHz *2
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
V
DS
=-20V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-2.8A
V
GS
=-2.5V, I
D
=-2.0A
V
GS=
-4.5V, V
DS
≤-5V
V
GS=
-2.5V, V
DS
≤-5V
V
DS
=-5V, I
D
=-2.8A
-6
-3
-0.45
Min
-20
MOSFET
Typ
Max
-1
-10
±100
-1
130
190
Unit
V
μA
nA
V
mΩ
A
6.5
415
223
87
5.8
0.85
1.7
13
36
42
34
-0.8
25
60
70
60
-1.6
-1.2
10
S
pF
nC
ns
Continuous Source Current (Diode Conduction) *1 Is
A
V
*1 Pulse test: PW
≤
300us duty cycle
≤
2%.
*2 For DESIGN AID ONLY, not subject to production testing.
*3 Switching time is essentially independent of operating temperature.
■
Marking
Marking
A1*
F
2
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SMD Type
P-Channel
MOSFET
SI2301DS-HF
(KI2301DS-HF)
10
MOSFET
■
Typical Characterisitics
10
Ou t p u t Ch ar ac t er i s t i c s
V
GS
= 5, 4.5, 4, 3.5, 3 V
Tr an s f er Ch ar ac t er i s t i c s
8
2.5 V
Drain Current (A)
8
T
C
= - 55C
I D - Drain Current (A)
25 C
6
125 C
4
6
4
2 V
2
ID -
0, 0.5, 1 V
1.5 V
2
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
0.6
)
VGS - Gate-to-Source Voltage (V)
1000
On-Resistance vs. Drain Current
Capacitance
0.5
rDS(on) - On-Resistance (
0.4
Capacitance (pF)
800
600
C
iss
400
C
oss
C
rss
200
0.3
V
GS
= 2.5 V
0.2
V
GS
= 4.5 V
0.1
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
5
V
DS
= 6 V
I
D
= 2.8 A
)
4
C
-
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
1.8
Gate Charge
On-Resistance vs. Junction T emperature
V
GS
= 4.5 V
I
D
= 2.8 A
VGS- Gate-to-Source Voltage (V)
1.6
r DS(on) - On-Resistance (
(Normalized)
1.4
3
1.2
2
1.0
1
0.8
0
0
2
4
6
8
0.6
- 50
0
50
100
150
Q - Total Gate Charge (nC)
TJ - Junction Temperature (
。
C)
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3
SMD Type
P-Channel
MOSFET
SI2301DS-HF
(KI2301DS-HF)
■
Typical Characterisitics
10
MOSFET
Source-Drain Diode Forward V oltage
0.6
On-Resistance vs. Gate-to-Source
Voltage
0.5
I S - Source Current (A)
r DS(on)- On-Resistance (
)
T
J
= 150 C
0.4
0.3
I
D
= 2.8 A
T
J
= 25 C
0.2
0.1
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0
2
4
6
8
V
SD
- Source-to-Drain Voltage (V)
0.4
V
GS
- Gate-to-Source Voltage (V)
14
12
10
Threshold V oltage
Single Pulse Power
0.3
V GS(th) Variance (V)
0.2
I
D
= 250 A
Power (W)
8
6
4
T
C
= 25 C
Single Pulse
0.1
0.0
- 0.1
.
2
0
150
0.01
0.10
1.00
Time (sec)
10.00
- 0.2
- 50
0
50
T
J
- Temperature ( C)
100
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
30
Square Wave Pulse Duration (sec)
4
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