SMD Type
P-Channel
MOSFET
SI3475DV
(KI3475DV)
( SOT-23-6 )
MOSFET
Unit: mm
0.4
-0.1
+0.1
■
Features
●
V
DS (V)
=-200V
●
I
D
=-0.95 A (V
GS
=-10V)
●
R
DS(ON)
＜
1.61Ω (V
GS
=-10V)
●
R
DS(ON)
＜
1.65Ω (V
GS
=-6V)
G
S
6
5
4
+0.2
1.6
-0.1
+0.2
2.8
-0.1
1
2
3
+0.01
-0.01
0.55
0.4
+0.02
0.15
-0.02
+0.2
-0.1
+0.1
1.1
-0.1
D
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Tc = 25℃
Continuous Drain Current (T
J
= 150 °C)
(Note.1,2)
(Note.1,2)
Symbol
V
DS
V
GS
Tc = 70℃
Ta = 25℃
Ta = 70℃
I
DM
L = 0.1 mH
Tc = 25℃
I
AS
E
AS
Rating
-200
±20
-0.95
+0.1
0.68
-0.1
1 Drain
2 Drain
3 Gate
4 Source
5 Drain
6 Drain
0-0.1
Unit
V
I
D
-0.77
-0.75
-0.59
-3
3
0.45
3.2
2.1
2
1.25
62.5
39
150
-55 to 150
mJ
A
Pulsed Drain Current
Avalanche Current
Single-Pulse Avalanche Energy
Power Dissipation
Tc = 70℃
(Note.1,2)
(Note.1,2)
Ta = 25℃
Ta = 70℃
t
≤
5 sec
Steady State
P
D
W
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Junction Storage Temperature Range
Note.1: Surface Mounted on 1" x 1" FR4 board.
Note.2: t = 5 sec.
R
thJA
R
thJF
T
J
T
stg
℃/W
℃
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1
SMD Type
P-Channel
MOSFET
SI3475DV
(KI3475DV)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Maximum Body-Diode Continuous Current
Pulse Diode Forward Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
t
a
t
b
I
S
I
SM
V
SD
I
S
=-1A,V
GS
=0V
T
C
= 25 °C
I
F
=-1.2A, d
I
/d
t
=100A/μs,T
J
= 25℃
V
DD
= - 100 V, R
L
= 100
Ω
I
D
≅
- 1 A, V
GEN
= - 6 V, R
g
= 1
Ω
V
DD
= - 100 V, R
L
= 100
Ω
I
D
≅
- 1 A, V
GEN
= - 10 V, R
g
= 1
Ω
f=1MHz
V
GS
=-10V, V
DS
=-100V, I
D
=-1A
V
GS
=-6V, V
DS
=-100V, I
D
=-1A
V
GS
=0V, V
DS
=-50V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-200V, V
GS
=0V
V
DS
=-200V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-0.9A
V
GS
=-6V, I
D
=-0.7A
V
GS
=-10V, V
DS
≥-10V
V
DS
=-10V, I
D
=-0.9A
-2
-2
Min
-200
MOSFET
Typ
Max
-1
-10
±100
-4
1.61
1.65
Unit
V
μA
nA
V
Ω
A
3.5
500
26
18
9
11.7
7.8
2
3.7
9
11
28
12
14
29
23
14
84
235
46
38
-0.95
-3
-1.2
14
18
42
18
21
44
35
21
130
350
14
18
12
S
pF
Ω
nC
ns
nC
nS
A
V
■
Marking
Marking
AI***
2
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SMD Type
P-Channel
MOSFET
SI3475DV
(KI3475DV)
■
Typical Characterisitics
5
1.5
MOSFET
I
D
– Drain Current (A)
3
V
GS
= 10 thru
I
D
– Drain Current (A)
4
1.2
0.9
T
C
= 125 °C
0.6
T
C
= 25 °C
T
C
= - 55 °C
2
1
4V
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
0.3
0.0
0
2
4
6
8
V
GS
– Gate-to-Source Voltage (V)
Output Characteristics
2.00
750
Transfer Characteristics
r
DS(on)
– On-Resistance (Ω)
1.80
C – Capacitance (pF)
V
GS
= 6 V
600
C
iss
1.60
450
1.40
V
GS
= 10 V
1.20
300
150
C
rss
0
C
oss
1.00
0
1
2
3
4
5
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 1 A
V
GS
– Gate-to-Source Voltage (V)
8
V
DS
= 100 V
r
DS(on)
– On-Resistance
(Normalized)
V
DS
= 75 V
6
V
DS
= 125 V
2.4
I
D
= 1 A
Capacitance
2.0
V
GS
= 10 V
1.6
V
GS
= 6 V
4
1.2
2
0.8
0
0.0
2.5
5.0
7.5
10.0
12.5
0.4
- 50
- 25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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3
SMD Type
P-Channel
MOSFET
SI3475DV
(KI3475DV)
■
Typical Characterisitics
10
6.0
MOSFET
I
S
- Source Current (A)
T
J
= 150 °C
1
r
DS(on)
– Drain-to-Source (Ω)
4.8
3.6
T
A
= 125 °C
2.4
T
J
= 25 °C
0.10
1.2
T
A
= 25 °C
0.01
0
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
0.0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.8
0.6
0.4
V
GS(th)
(V)
0.2
I = 5 mA
D
0.0
- 0.2
- 0.4
- 50
12
I = 5 µA
D
Power (W)
36
60
On-Resistance vs. Gate-to-Source Voltage
48
24
0
- 25
0
25
50
75
100
125
.
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
– Temperature (°C)
Threshold Voltage
10
*Limited by r
DS(on)
1.1
Single Pulse Power, Junction-to-Ambient
I
D
– Drain Current (A)
1
1 ms
Power (W)
0.1
10 ms
100 ms
0.01
T
A
= 25 °C
Single Pulse
1000
1
100
10
V
DS
– Drain-to-Source Voltage (V)
*V
GS
minimum V
GS
at which r
DS(on)
is specified
1 s
10 s
dc
0.9
0.7
0.4
0.2
0.001
0.1
0
0
25
50
75
100
125
150
Safe Operating Area
T
C
– Case Temperature (°C)
Current Derating*
4
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SMD Type
P-Channel
MOSFET
SI3475DV
(KI3475DV)
■
Typical Characterisitics
4.0
1.5
MOSFET
3.2
Power (W)
1.2
2.4
Power (W)
0
25
50
75
100
125
150
0.9
1.6
0.6
0.8
0.3
0.0
0.0
0
25
50
75
100
125
150
T
C
– Case Temperature (°C)
T
C
– Case Temperature (°C)
Power, Junction-to-Foot
Power Derating, Junction-to-Ambient
1
D uty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
Note s:
P
DM
t
1
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
t
1
t
2
S ingle P l
u se
0.01
10
- 4
10
-3
10
- 2
1
10
- 1
Square Wave Pulse Duration (sec)
10
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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