SMD Type
P-Channel
MOSFET
SI2343DS
(KI2343DS)
MOSFET
SOT-23-3
Unit: mm
+0.2
2.9
-0.1
+0.1
0.4
-0.1
■
Features
+0.2
2.8
-0.1
3
●
V
DS (V)
=-30V
●
I
D
=-4 A (V
GS
=-10V)
●
R
DS(ON)
＜
53mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
86mΩ (V
GS
=-4.5V)
G
1
3
S
2
D
+0.2
1.6
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.2
2
0.55
0.4
+0.02
0.15
-0.02
+0.2
1.1
-0.1
1. Gate
2. Source
+0.1
0.68
-0.1
0-0.1
3. Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
150
-55 to 150
1.25
0.8
100
-4
-3.2
-15
0.75
0.48
166
50
W
5s
Steady State
-30
±20
-3.1
-2.5
A
Unit
V
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Junction Storage Temperature Range
℃/W
℃
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1
SMD Type
P-Channel
MOSFET
SI2343DS
(KI2343DS)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=-1A,V
GS
=0V
V
DD
= - 15 V, R
L
= 15
Ω
I
D
≅
- 1A, V
GEN
= - 10 V
R
G
= 6
Ω
V
GS
=-10V, V
DS
=-15V, I
D
=-4A
V
GS
=0V, V
DS
=-15V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
DS
=-24V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-3.1A
V
GS
=-5V, V
DS
=-10V
V
DS
=-5V, I
D
=-4A
(Note.1)
(Note.1)
(Note.1)
(Note.1)
-15
-1
Min
-30
MOSFET
Typ
Max
-1
-10
±100
-3
53
86
Unit
V
uA
nA
V
mΩ
A
10
540
131
105
14
1.9
3.7
10
15
31
20
15
25
50
30
-1
-1.2
21
S
pF
nC
ns
A
V
Note.1: Pulse test: PW
≤
300
μs,
duty cycle
≤
2 %.
■
Marking
Marking
F3
2
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SMD Type
P-Channel
MOSFET
SI2343DS
(KI2343DS)
■
Typical Characterisitics
15
V
GS
= 10 thru 5 V
12
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4 V
12
15
MOSFET
9
9
6
6
T
C
= 125 °C
25 °C
- 55 °C
2.5
3.0
3.5
4.0
3
3 V
3
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.12
0.10
R
DS(on)
- On-Resistance (Ω)
0.08
0.06
0.04
0.02
0.00
0
3
6
9
12
15
V
GS
= 4.5 V
C - Capacitance (pF)
1000
Transfer Characteristics
800
600
C
iss
V
GS
= 10 V
400
C
oss
C
rss
0
0
5
10
15
20
25
30
200
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
V
GS
- Gate-to-Source Voltage (V)
V
DS
=15 V
I
D
= 4.0 A
R
DS(on)
- On-Resistance
1.6
V
GS
= 4.0 V
I
D
= 4.0 A
Capacitance
8
1.4
6
(Normalized)
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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3
SMD Type
P-Channel
MOSFET
SI2343DS
(KI2343DS)
■
Typical Characterisitics
20
0.12
0.10
R
DS(on)
- On-Resistance (Ω)
MOSFET
10
I
S
- Source Current (A)
I
D
= 4.0 A
0.08
0.06
0.04
0.02
I
D
= 1 A
T
J
= 150 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.6
I
D
= 250 µA
0.4
V
GS(th)
Variance (V)
12
10
On-Resistance vs. Gate-to-Source Voltage
Power (W)
0.2
8
6
4
0.0
T
A
= 25 °C
- 0.2
2
0
0.01
0.1
1
Time (s)
10
100
600
- 0.4
- 50
- 25
0
25
50
75
100
.
125
150
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
I
DM
Limited
Single Pulse Power
P(t) = 0.0001
1
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
I
D(on)
Limited
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
4
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SMD Type
P-Channel
MOSFET
SI2343DS
(KI2343DS)
■
Typical Characterisitics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
MOSFET
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 120 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA (t)
4. Surface Mounted
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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