SMD Type
P-Channel Enhancement
MOSFET
SI2333CDS
(KI2333CDS)
■
Features
●
V
DS (V)
=-12V
●
I
D
=-5.1A (V
GS
=-4.5V)
+0.1
2.4
-0.1
MOSFET
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
●
R
DS(ON)
＜
35mΩ (V
GS
=-4.5V)
●
R
DS(ON)
＜
45mΩ (V
GS
=-2.5V)
Ω
●
R
DS(ON)
＜
59m (V
GS
=-1.8V)
G
1
3
S
2
D
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
-0.1
1.Gate
2.Source
+0.1
0.38
-0.1
0-0.1
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 70℃
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
2.5
1.6
100
50
150
-55 to 150
-7.1
-5.7
-20
1.25
0.8
W
5 sec
-12
±8
-5.1
-4.0
A
Steady State
Unit
V
℃/W
℃
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1
SMD Type
P-Channel Enhancement
MOSFET
SI2333CDS
(KI2333CDS)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On state drain current *1
Forward Transconductance *1
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Maximum Body-Diode Continuous Current
Pulse Diode Forward Current *1
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
R
g
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Q
rr
t
rr
t
a
t
b
I
S
I
SM
V
SD
I
S
=-1.0A,V
GS
=0V
T
C
=25℃
IF = 1.0 A, di/dt = 100 A/ us,T
J
=25℃
V
GS
=-4.5V, V
DS
=-6V, R
L
=6Ω,R
GEN
=1Ω
I
D
=-1.0A
V
GS
=-4.5V, V
DS
=-6V, I
D
=-5.1A
V
GS
=-2.5V, V
DS
=-6V, I
D
=-5.1A
V
GS
=0V, V
DS
=-6V, f=1MHz
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-12V, V
GS
=0V
V
DS
=-12V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-5.1A
V
GS
=-2.5V, I
D
=-4.5A
V
GS
=-1.8V, I
D
=-2.0A
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-1.9A
f=1.0MHz
-20
-0.4
Min
-12
MOSFET
Typ
Max
-1
-10
±100
-1
Unit
V
μA
nA
V
28. 5
36
46
1.6
4.0
1225
315
260
15
9
1.9
3.8
13
35
45
12
20
32
16
16
35
45
59
A
S
Ω
pF
25
15
nC
mΩ
20
60
70
20
40
50
ns
-1.0
-20
nC
ns
A
V
-0.7
-1.2
*1Pulse test: PW
≤
300us duty cycle
≤
2%.
■
Marking
Marking
O3*
2
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SMD Type
P-Channel Enhancement
MOSFET
SI2333CDS
(KI2333CDS)
■
Typical Characterisitics
20
V
GS
= 5 thru 2.5 V
V
GS
= 2 V
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.5
2.0
MOSFET
T
C
= 25 °C
1.0
10
V
GS
= 1.5 V
5
0.5
T
C
= 125 °C
V
GS
= 1 V
T
C
= - 55 °C
0.3
0.6
0.9
1.2
1.5
0
0.0
0.5
1.0
1.5
2.0
0.0
0.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.10
2400
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.08
1800
0.06
V
GS
= 1.8 V
V
GS
= 2.5 V
0.04
C - Capacitance (pF)
C
iss
1200
0.02
V
GS
= 4.5 V
600
C
rss
0
C
oss
0.00
0
5
10
I
D
- Drain Current (A)
15
20
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
8
I
D
= 5.1 A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance
(Ω)
V
DS
= 3 V
6
V
DS
= 6 V
4
V
DS
= 9 V
1.4
1.6
I
D
= 5.1 A
Capacitance
V
GS
= 2.5 V
(Normalized)
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0
5
10
15
20
25
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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SMD Type
P-Channel Enhancement
MOSFET
SI2333CDS
(KI2333CDS)
■
Typical Characterisitics
100
0.14
I = 5.1 A
D
0.12
R
DS(on)
- On-Resistance (Ω)
10
I
S
- Source C urrent (A)
T
J
= 150 °C
0.10
0.08
0.06
MOSFET
1
T
J
= 25 °C
0.1
T
J
= - 55 °C
T
J
= 125 °C
0.04
0.02
T
J
= 25 °C
0.01
0.001
0.0
0.00
0.2
0.4
0.6
0.
8
1.0
1.2
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
10
On-Resistance vs. Gate-to-Source Voltage
V
GS
- Gate-to-Source Voltage (V)
0.3
V
GS(th)
Variance (V)
I
D
= 250 µA
0.2
I
D
= 1 mA
Power (W)
8
6
0.1
4
0.0
2
.
- 0.1
T
A
= 25 °C
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
100
Limitedby R
DS(on)
*
100 µs
10
I
D
- Drain Current (A)
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
1 s, 10 s
100 s, DC
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power
B V DSS
Limited
1
10
0.01
0.1
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
4
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SMD Type
P-Channel Enhancement
MOSFET
SI2333CDS
(KI2333CDS)
■
Typical Characterisitics
1
D uty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
MOSFET
0.2
0.1
0.1
0.05
0.02
0.01
10
-4
Single Pulse
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
D uty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
N otes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJF
= 50 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mo unted
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
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