SMD Type
P-Channel
MOSFET
SI2323DS-HF
(KI2323DS-HF)
■
Features
●
V
DS (V)
=-20V
●
I
D
=-4.7A (V
GS
=-4.5V)
+0.1
2.4
-0.1
MOSFET
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
●
R
DS(ON)
＜
68mΩ (V
GS
=-1.8V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
G
1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
●
R
DS(ON)
＜
52mΩ (V
GS
=-2.5V)
+0.1
1.3
-0.1
●
R
DS(ON)
＜
39mΩ (V
GS
=-4.5V)
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Gate
2.Source
+0.1
0.38
-0.1
0-0.1
3
S
2
D
3.Drain
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
1.25
0.8
100
166
50
150
-55 to 150
℃
℃/W
-4.7
-3.8
-20
0.75
0.48
W
5 sec
-20
±8
-3.7
-2.9
A
Steady State
Unit
V
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1
SMD Type
P-Channel
MOSFET
SI2323DS-HF
(KI2323DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
5 sec
Steady State
I
S
=-1.0A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-10V, R
L
=10Ω,R
GEN
=6Ω
I
D
=-1.0A *1
V
GS
=-4.5V, V
DS
=-10V, I
D
=-4.7A *1
V
GS
=0V, V
DS
=-10V, f=1MHz *1
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
DS
=-16V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-4.7A
V
GS
=-2.5V, I
D
=-4.1A
V
GS
=-1.8V, I
D
=-2A
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-4.7A
-20
-0.4
Min
-20
MOSFET
Typ
Max
-1
-10
±100
-1.0
39
52
68
Unit
V
μA
nA
V
mΩ
A
16
1020
191
140
12.5
1.7
3.3
25
43
71
48
40
65
110
75
-1.0
-0.6
-0.7
-1.2
19
S
pF
nC
ns
A
V
*1Pulse test: PW
≤
300us duty cycle
≤
2%.
■
Marking
Marking
D3*
F
2
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SMD Type
P-Channel
MOSFET
SI2323DS-HF
(KI2323DS-HF)
■
Typical Characterisitics
20
MOSFET
Output Characteristics
V
GS
= 5 thru 2.5 V
20
Transfer Characteristics
T
C
= -55 C
16
I
D
- Drain Current (A)
2V
I
D
- Drain Current (A)
16
25 C
12
12
125 C
8
1.5 V
8
4
1V
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
4
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
0.15
On-Resistance vs. Drain Current
1800
1500
C - Capacitance (pF)
1200
900
600
300
0
C
rss
0
4
Capacitance
0.12
r
DS(on)
- On-Resistance (
)
0.09
V
GS
= 1.8 V
0.06
V
GS
= 2.5 V
C
iss
0.03
V
GS
= 4.5 V
C
oss
0.00
0
4
8
12
16
20
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 4.7 A
1.5
1.4
r
DS(on)
- On-Resistance ( )
(Normalized)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
0.6
-50
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 4.7 A
4
3
2
1
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
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SMD Type
P-Channel
MOSFET
SI2323DS-HF
(KI2323DS-HF)
■
Typical Characterisitics
20
10
0.12
)
MOSFET
Source-Drain Diode Forward Voltage
0.15
On-Resistance vs. Gate-to-Source Voltage
I
S
- Source Current (A)
T
J
= 150 C
T
J
= 25 C
1
r
DS(on)
- On-Resistance (
0.09
I
D
= 2 A
I
D
= 4.7 A
0.06
0.03
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.00
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
0.4
0.3
V
GS(th)
Variance (V)
0.2
Threshold Voltage
12
I
D
= 140 A
10
Single Pulse Power
8
Power (W)
6
4
T
A
= 25 C
2
.
0.1
0.0
-0.1
-0.2
-50
-25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature ( C)
100
Safe Operating Area
r
DS(on)
Limited
I
DM
Limited
10
I
D
- Drain Current (A)
P(t) = 0.0001
P(t) = 0.001
I
D(on)
Limited
T
A
= 25 C
Single Pulse
BV
DSS
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
1
0.1
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
4
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SMD Type
P-Channel
MOSFET
SI2323DS-HF
(KI2323DS-HF)
■
Typical Characterisitics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 120 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
- 1
1
10
100
600
Square Wave Pulse Duration (sec)
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