SMD Type
P-Channel
MOSFET
SI2321DS-HF
(KI2321DS-HF)
SOT-23-3
MOSFET
Unit: mm
+0.2
2.9
-0.1
+0.1
0.4
-0.1
●
V
DS (V)
=-20V
+0.2
2.8
-0.1
3
●
R
DS(ON)
＜
76mΩ (V
GS
=-2.5V)
●
R
DS(ON)
＜
110mΩ (V
GS
=-1.8V)
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1
2
0.55
●
R
DS(ON)
＜
57mΩ (V
GS
=-4.5V)
0.95
+0.1
-0.1
+0.2
1.6
-0.1
●
I
D
=-3.3A (V
GS
=-4.5V)
0.4
■
Features
+0.02
0.15
-0.02
+0.1
-0.2
1.9
+0.2
1.1
-0.1
1. Gate
+0.1
0.68
-0.1
0-0.1
2. Source
3. Drain
G
1
3
D
S
2
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
0.89
0.57
140
175
75
150
-55 to 150
℃
℃/W
-3.3
-2.6
-12
0.71
0.45
W
5 sec
-20
±8
-2.9
-2.3
A
Steady State
Unit
V
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SMD Type
P-Channel
MOSFET
SI2321DS-HF
(KI2321DS-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=-1.6A,V
GS
=0V
V
GS
=-4.5V, V
DS
=-6V, R
L
=6Ω,R
GEN
=6Ω
I
D
=-1.0A *1
V
GS
=-4.5V, V
DS
=-6V, I
D
=-3.3A *1
V
GS
=0V, V
DS
=-6V, f=1MHz *1
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
DS
=-16V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-4.5V, I
D
=-3.3A
V
GS
=-2.5V, I
D
=-2.8A
V
GS
=-1.8V, I
D
=-4A
V
GS
=-4.5V, V
DS
=-5V
V
DS
=-5V, I
D
=-3.3A
-6
-0.4
Min
-20
MOSFET
Typ
Max
-1
-10
±100
-0.9
57
76
110
Unit
V
μA
nA
V
mΩ
A
3
715
170
120
8
1.2
2.2
15
35
60
40
25
55
90
60
-1.6
-1.2
13
S
pF
nC
ns
A
V
*1Pulse test: PW
≤
300us duty cycle
≤
2%.
■
Marking
Marking
D1*
F
2
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SMD Type
P-Channel
MOSFET
SI2321DS-HF
(KI2321DS-HF)
■
Typical Characterisitics
12
V
GS
= 4.5 thru 2.5 V
10
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
6
1.5 V
4
2
0
0.0
MOSFET
Output Characteristics
2V
12
10
8
6
4
Transfer Characteristics
T
C
= 125 C
2
25 C
- 55 C
0.5 V
1.0 V
1.6
2.0
0
0.0
0.4
0.8
1.2
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
0.30
0.25
On-Resistance vs. Drain Current
1200
Capacitance
)
r
DS(on)
- On-Resistance (
C - Capacitance (pF)
900
0.20
0.15
V
GS
= 1.8 V
0.10
0.05
0.00
0
2
4
6
8
V
GS
= 4.5 V
10
12
V
GS
= 2.5 V
C
iss
600
300
C
rss
0
0
4
C
oss
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 3.3 A
Gate Charge
Normalized On-Resistance vs. Junction Temperature
1.5
V
GS
= 4.5 V
I
D
= 3.3 A
3
r
DS(on)
- On-Resistance ( )
(Normalized)
4
6
8
10
4
1.3
1.1
2
0.9
1
0.7
0
0
2
Q
g
- Total Gate Charge (nC)
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature ( C)
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SMD Type
P-Channel
MOSFET
SI2321DS-HF
(KI2321DS-HF)
■
Typical Characterisitics
20
10
0.4
I
S
- Source Current (A)
r
DS(on)
- On-Resistance (
)
MOSFET
Source-Drain Diode Forward Voltage
0.5
On-Resistance vs. Gate-to-Source Voltage
0.3
T
J
= 150 C
1
T
J
= 25 C
0.2
I
D
= 3.3 A
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0.0
0
1
2
3
4
5
6
7
8
V
GS
- Gate-to-Source Voltage (V)
0.4
0.3
V
GS(th)
Variance (V)
0.2
0.1
0.0
- 0.1
Threshold Voltage
10
I
D
= 250 A
Single Pulse Power
8
Power (W)
6
4
T
A
= 25 C
2
.
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.01
0.1
1
Time (sec)
10
100
600
T
J
- Temperature ( C)
100
Limited
by r
DS(on)
10
I
D
- Drain Current (A)
Safe Operating Area
100 s, 10 s
1
1 ms
10 ms
100 ms
0.1
T
A
= 25 C
Single Pulse
dc, 100 s, 10 s, 1 s
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
4
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SMD Type
P-Channel
MOSFET
SI2321DS-HF
(KI2321DS-HF)
■
Typical Characterisitics
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 130 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
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