SMD Type
Dual N-Channel
MOSFET
SI9926DY-HF
(KI9926DY-HF)
MOSFET
■
Features
●
V
DS (V)
= 20V
●
I
D
= 6.5 A (V
GS
= 4.5V)
●
R
DS(ON)
＜
30mΩ (V
GS
= 4.5V)
●
R
DS(ON)
＜
43mΩ (V
GS
= 2.5V)
SOP-8
1.50
0.15
+0.04
0.21
-0.02
●
Low gate charge
●
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
5
6
7
8
Q2
Q1
1
2
3
4
Source
Gate
Source
Gate
5
6
7
8
Drain
Drain
Drain
Drain
4
3
2
1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation for Dual Operation
(Note.1)
Power Dissipation for Single Operation
(Note.2)
(Note.3)
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
R
thJA
R
thJC
T
J
T
stg
P
D
(Note.1)
Symbol
V
DS
V
GS
I
D
I
DM
Rating
20
±10
6.5
20
2
1.6
1
0.9
78
40
150
-55 to 150
℃/W
W
Unit
V
A
℃
Note.1: 78°/W when mounted on a 0.5in
2
pad of 2 oz copper
Note.2: 125°/W when mounted on a 0.02 in
2
pad of 2 oz copper
Note.3: 135°/W when mounted on a minimum pad.
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1
SMD Type
Dual N-Channel
MOSFET
SI9926DY-HF
(KI9926DY-HF)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
(Note.1)
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(O
n
)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
V
SD
I
S
=1.3A,V
GS
=0V
(Note.1)
V
GS
=4.5V, V
DS
=100V, I
D
=1A,R
G
=6Ω
(Note.1)
V
GS
=4.5V, V
DS
=10V, I
D
=3A (Note.1)
V
GS
=0V, V
DS
=10V, f=1MHz
Test Conditions
I
D
=250μA, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
DS
=0V, V
GS
=±10V
V
DS
=V
GS
, I
D
=250μA
V
GS
=4.5V, I
D
=6.5A
V
GS
=4.5V, I
D
=6.5A
V
GS
=2.5V, I
D
=5.4A
V
GS
=4.5V, V
DS
=5V
V
DS
=5V, I
D
=3A
(Note.1)
(Note.1)
15
T
J
=125℃
(Note.1)
0.5
Min
20
MOSFET
Typ
Max
1
±100
1.5
30
50
43
Unit
V
μA
nA
V
mΩ
A
11
700
175
85
7
1.2
1.9
8
10
18
5
16
18
29
10
1.3
1.2
10
S
pF
nC
ns
A
V
Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%
■
Marking
Marking
9926
KA****
F
2
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SMD Type
Dual N-Channel
MOSFET
SI9926DY-HF
(KI9926DY-HF)
■
Typical Characterisitics
20
3
3.5V
I
D
, DRAIN CURRENT (A)
15
3.0V
2.5V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
MOSFET
2.5
V
GS
= 2.0V
2
2.5V
3.0V
1
3.5V
10
2.0V
1.5
5
1.5V
0
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4.0V
4.5V
0.5
0
5
10
I
D
, DRAIN CURRENT (A)
15
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.1
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3A
V
GS
= 4.5V
I
D
= 1.5 A
0.08
1.4
1.2
0.06
T
A
= 125
o
C
1
0.04
0.8
0.02
T
A
= 25
o
C
0.6
-50
-25
0
25
50
75
100
o
125
150
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
20
T
A
= -55
o
C
25
125
o
C
10
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
15
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
10
1
0.1
0.01
0.001
0.0001
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
5
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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3
SMD Type
Dual N-Channel
MOSFET
SI9926DY-HF
(KI9926DY-HF)
■
Typical Characterisitics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 3A
4
V
DS
= 5V
10V
CAPACITANCE (pF)
15V
800
C
ISS
600
1000
MOSFET
f = 1MHz
V
GS
= 0 V
3
2
400
1
200
C
OSS
C
RSS
0
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
0
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
100 s
1ms
10ms
1
V
GS
= 10V
SINGLE PULSE
R
JA
= 135
o
C/W
T
A
= 25
o
C
DC
100ms
1s
10s
P(pk), PEAK TRANSIENT POWER (W)
R
DS(ON)
LIMIT
I
D
, DRAIN CURRENT (A)
10
50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
R
JA
= 135°C/W
T
A
= 25°C
30
20
0.1
10
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
0.001
0.01
0.1
1
t
1
, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
1
D = 0.5
0.2
.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
R
JA
(t) = r(t) + R
JA
R
JA
= 135°C/W
P(pk)
t
1
t
2
0.01
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
0.001
0.0001
0.001
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
4
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