Preliminary
Datasheet
RJP65T43DPM
650V - 20A - IGBT
Application: Power Factor Correction circuit
Features
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 20 A, V
GE
= 15 V, Ta = 25°C)
•
Isolated package
•
Trench gate and thin wafer technology (G7H series)
•
High speed switching
t
f
= 45 ns typ. (at V
CC
= 400 V, V
GE
= 15 V , I
C
= 20 A, Rg = 10
Ω,
Ta = 25°C, Inductive load)
•
Operation frequency (20kHz
≤
f
˂
100kHz)
•
Not guarantee short circuit withstand time
R07DS1201EJ0100
Rev.1.00
Apr 23, 2014
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
G
1. Gate
2. Collector
3. Emitter
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
Note1
I
C
Note1
I
C
ic(peak)
Note1
P
C
θj-c
Note2
Tj
Note3
Tstg
Ratings
650
±30
40
20
150
68.8
2.18
175
–55 to +150
Unit
V
V
A
A
A
W
°C/W
°C
°C
Notes: 1. Pulse width limited by safe operating area.
2. Value at Tc = 25°C
3. Please use this device in the thermal conditions which the junction temperature does not exceed 175°C.
Renesas IGBT Application Note is disclosed about reliability test and application condition up to 175°C.
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 1 of 7
RJP65T43DPM
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on loss energy
Turn-off loss energy
Total switching energy
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
Min
⎯
⎯
4.0
⎯
—
—
—
—
—
—
⎯
—
—
—
—
—
—
⎯
—
—
—
—
—
—
Typ
⎯
⎯
⎯
1.8
1550
37
26
69
10
30
30
20
100
45
0.4
0.2
0.6
31
25
110
45
0.54
0.29
0.83
Max
1
±1
7.0
2.4
—
—
—
—
—
—
⎯
—
—
—
—
—
—
⎯
—
—
—
—
—
—
Unit
μA
μA
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
Test Conditions
V
CE
= 650 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 0.67 mA
I
C
= 20 A, V
GE
= 15V
Note4
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 400 V
I
C
= 20 A
V
CC
= 400 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10
Ω
T
C
= 25 °C
Inductive load
Note5
V
CC
= 400 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10
Ω
T
C
= 150 °C
Inductive load
Note5
Notes: 4. Pulse test
5. Switching time test circuit and waveform are shown below.
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 2 of 7
RJP65T43DPM
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
80
60
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
60
Collector Current I
C
(A)
50
40
30
20
10
0
40
20
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
150
Typical Transfer Characteristics
Collector Current I
C
(A)
100
PW
=1
0
μ
s
Collector Current I
C
(A)
125
100
150
°
C
75
Tc = 25
°
C
50
25
0
10
10
0
μ
s
1
0.1
Tc = 25°C
Single pulse
10
100
1000
0.01
1
V
CE
= 10 V
Pulse Test
0
4
8
12
16
20
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
Typical Output Characteristics
160
Pulse 2
Test
Tc = 25
°
C
15 V
11 V
80
8.5 V
160
10 V
9.5 V
Typical Output Characteristics
Pulse Test
Tc = 150
°
C
15 V
11 V
9.0 V
8.5 V
80
8.0 V
40
7.5 V
V
GE
= 7.0 V
0
0
2
4
6
8
10
10 V
9.5 V
Collector Current I
C
(A)
120
9.0 V
Collector Current I
C
(A)
120
8.0 V
40
V
GE
= 7.5 V
0
0
2
4
6
8
10
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 3 of 7
RJP65T43DPM
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
4
I
C
= 40 A
3
20 A
10 A
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
I
C
= 40 A
20 A
10 A
Tc = 150
°
C
Pulse Test
4
3
2
2
1
1
0
0
4
8
12
16
20
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
−25
20 A
V
GE
= 15 V
Pulse Test
I
C
= 40 A
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
8
I
C
= 10 mA
6
4
0.67 mA
10 A
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Case Temparature Tc (
°
C)
Typical Capacitance vs.
Collector to Emitter Voltage
10000
Cies
1000
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
V
CC
= 400 V
I
C
= 20 A
Tc = 25
°
C
16
V
GE
12
Capacitance C (pF)
600
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Tc = 25
°
C
0
50
100
150
200
Cres
400
8
200
V
CE
0
0
20
40
60
80
4
1
250
300
0
100
Collector to Emitter Voltage V
CE
(V)
Gate Charge Qg (nC)
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 4 of 7
RJP65T43DPM
Switching Characteristics (Typical) (1)
V
CC
= 400 V, V
GE
= 15 V
Rg = 10
Ω,
Tc = 150
°
C
Preliminary
Switching Characteristics (Typical) (2)
Swithing Energy Losses E (mJ)
10
V
CC
= 400 V, V
GE
= 15 V
Rg = 10
Ω,
Tc = 150
°
C
Eon
1
Eoff
1000
Switching Times t (ns)
tf
100
td(off)
td(on)
tr
1
10
100
10
0.1
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Swithing Energy Losses E (mJ)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 20 A, Tc = 150
°
C
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 20 A, Tc = 150
°
C
100
td(off)
tf
td(on)
tr
1
Eon
Eoff
10
1
10
100
0.1
1
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
10
V
CC
= 400 V, V
GE
= 15 V
I
C
= 20 A, Rg = 10
Ω
Switching Characteristics (Typical) (5)
1000
V
CC
= 400 V, V
GE
= 15 V
I
C
= 20 A, Rg = 10
Ω
Switching Times t (ns)
td(off)
100
tf
tr
10
25
1
Eon
td(on)
Eoff
0.1
25
50
75
100
125
150
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS1201EJ0100 Rev.1.00
Apr 23, 2014
Page 5 of 7
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