Preliminary
Datasheet
RJE0616JSP
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
REJ03G1944-0100
Rev.1.00
Jul 01, 2010
Features
For Automotive applications
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance R
DS(on)
: 77 m Typ, 90 m Max (V
GS
= –10 V)
High density mounting
AEC-Q101 compliant
Outline
RENESAS Package code:
PRSP0008DD-D
(Package name:
SOP-8)
8
5
7 6
D
5
D
6
D
7
D
8
3
1 2
4
4
G
Gate Resistor
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Temperature
Sensing
Circuit
Latch
Circuit
1
S
S
2
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Symbol
Ratings
V
DSS
–60
V
GSS
–16
V
GSS
2.5
Note3
Drain current
I
D
–4
Body-drain diode reverse drain current
I
DR
–4
Note 2
Avalanche current
I
AP
–4
Note 2
Avalanche energy
E
AR
68.6
Note 1
Channel dissipation
Pch
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1 When using the glass epoxy board (FR4 40
40
1.6 mm), PW
10 s
2. Tch = 25C, Rg
50
3. It provides by the current limitation lower bound value.
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
Page 1 of 7
RJE0616JSP
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
–3.5
—
—
—
—
—
—
—
–3.5
–4
Typ
—
—
—
—
—
–0.8
–0.35
175
—
—
Max
—
–1.2
–100
–50
–1
—
—
—
–12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
Test Conditions
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Vi = –1.2 V, V
DS
= 0
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Channel temperature
(dv/dt V
GS
500 V/ms)
V
GS
= –12 V, V
DS
= –10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS1
I
DSS2
V
GS(off)
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
Min
—
—
–4
–60
–16
2.5
—
—
—
—
—
—
—
—
–2.2
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
—
102
77
290
3.20
2.80
1.55
1.05
–0.84
84
6.34
Max
–4
–10
—
—
—
—
–100
–50
–1
100
—
—
–10
–10
–3.4
150
90
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
A
V
m
m
pF
s
s
s
s
V
ns
ms
Test Conditions
V
GS
= –3.5 V, V
DS
= –10 V
V
GS
= –1.2 V, V
DS
= –10 V
V
GS
= –12 V, V
DS
= –10 V
Note 5
I
D
= –10 mA, V
GS
= 0
I
G
= –800
A,
V
DS
= 0
I
G
= 100
A,
V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
GS
= –1.2 V, V
DS
= 0
V
GS
= 2.4 V, V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –48 V, V
GS
= 0,
Ta = 125C
V
DS
= –10 V, I
D
= –1 mA
I
D
= –2 A, V
GS
= –6 V
Note 5
I
D
= –2 A, V
GS
= –10 V
V
DS
= –10 V, V
GS
= 0, f = 1MHz
V
GS
= –10 V, I
D
= –2 A,
R
L
= 15
Note 5
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 6
operation time
I
F
= –4 A, V
GS
= 0
I
F
= –4 A, V
GS
= 0
di
F
/dt = 50 A/s
V
GS
= –5 V, V
DD
= –16 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
Page 2 of 7
RJE0616JSP
Preliminary
Main Characteristics
Power vs. Temperature Derating
4.0
100
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
≤
10s)
Maximum Safe Operation Area
Ta = 25°C
Thermal shut down operation area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
3.0
10
PW
1
=
m
s
2.0
1
10
1.0
0.1
Operation
in this area
is limited R
DS(on)
DC
O
pe
ra
tio
n
m
s
(P
W
No
te
7
≤
1
0s
)
0
0
50
100
150
200
0.01
−0.01
−0.1
−1
−10
−100
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Note 7:
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
−4
−10
V
−7
V
−4
−4.4
V
Typical Transfer Characteristics
V
DS
=
−10
V
Pulse Test
Drain Current I
D
(A)
−3
Drain Current I
D
(A)
−6
V
−5
V
−4.8
V
−3
Tc = 150°C
−2
−2
−4.6
V
−4.2
V
V
GS
=
−4
V
−1
−1
25°C
−40°C
Pulse Test
0
−2
−4
−6
−8
−10
0
−2
−4
−6
−8
−10
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
−1000
−800
−600
−400
−200
−0
−2
I
D
=
−2
A
−1
A
−0.5
A
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
V
GS
=
−6
V
100
−10
V
−4
−6
−8
−10 −12 −14 −16
10
−0.1
−1
−10
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
Page 3 of 7
RJE0616JSP
Static Drain to Source On State Resistance
vs. Temperature
Pulse Test
150
Preliminary
Body-Drain Diode Reverse
Recovery Time
1000
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
−1
A
−0.5
A
100 V
GS
=
−6
V
I
D
=
−0.5
A,
−1
A,
−2
A
50
V
GS
=
−10
V
Reverse Recovery Time trr (ns)
200
I
D
=
−2
A
100
0
−50 −25
0
25
50
75 100 125 150
10
−0.1
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
−1
−10
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
−4
Switching Characteristics
10
Reverse Drain Current I
DR
(A)
td(on)
Switching Time t (μs)
tr
td(off)
1
tf
V
GS
=
−5
V
−3
−2
V
GS
= 0 V, 5 V, 10 V
0.1
V
GS
=
−10
V, V
DD
=
−30
V
PW = 300
μs,
duty
≤
1 %
−1
−10
−1
Pulse Test
0
−0.4
−0.8
−1.2
−1.6
−2.0
0.01
−0.1
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
Source to Drain Voltage V
SD
(V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Gate to Source Voltage V
GS
(V)
1000
V
GS
= 0
f = 1 MHz
−16
−14
−12
−10
−8
−6
−4
−2
0
1
10
100
V
DD
=
−16
V
Capacitance C (pF)
100
10
0
−10
−20
−30
−40
−50
−60
Drain to Source Voltage V
DS
(V)
Shutdown Time of Load-Short Test PW (ms)
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
Page 4 of 7
RJE0616JSP
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
200
Preliminary
180
160
140
I
D
=
−0.5
A
dv / dt
V
GS
≥
500 V/ ms
0
−2
−4
−6
−8
−10
120
100
Gate to Source Voltage V
GS
(V)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
h
1s
ot
pu
lse
θch −
f(t) =
γs
(t)
• θch −
f
θch −
f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40
×
40
×
1.6 mm)
PDM
PW
T
D=
PW
T
0.001
100
μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
• L • I
AP2
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
I
D
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D.U.T
Vin
–10 V
50
Ω
V
DD
0
REJ03G1944-0100 Rev.1.00
Jul 01, 2010
Page 5 of 7
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
