1N4448W
Elektronische Bauelemente
Surface Mount Fast Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Fast switching speed
Ultra-Small surface mount package
For general purpose switching applications
High conductance
Also available in lead-free version
D
SOD-123
1
Cathode Band
H
G
2
MECHANICAL DATA
Case: SOD-123, Plastic
Epoxy: UL 94V-0 rate flame retardant
Metallurgically bonded construction
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.0094 grams
C
F
B
A
E
J
REF.
A
B
C
D
E
MARKING
T5
Millimeter
Min.
Max.
1.05
1.25
0.10 REF.
1.05
1.15
0.45
0.65
0.08
0.15
REF.
F
G
H
J
Millimeter
Min.
Max.
1.50
1.70
2.60
2.80
3.55
3.85
0.50 REF.
ABSOLUTE MAXIMUM RATINGS
(at Ta = 25°C unless otherwise specified, single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating Temperature, Storage Temperature
@ t = 1.0µs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
T
J
, T
STG
Value
100
75
Unit
V
V
53
500
250
4.0
2.0
400
315
-65 ~ 150
V
mA
mA
A
mW
℃
/W
℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Symbol
V
RM
Min.
75
Max.
-
0.715
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
V
Test Conditions
I
R
= 1.0µA
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
V
R
= 75V
V
R
= 75V, T
J
= 150
°C
V
R
= 25V, T
J
= 150
°C
V
R
= 20V
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1x I
R
, R
L
= 100
Ω
Forward Voltage (Note 2)
V
FM
-
V
Peak Reverse Current (Note 2)
I
RM
-
µA
µA
µA
nA
pF
nS
Total Capacitance
Reverse Recovery Time
NOTES:
C
T
t
RR
-
-
1. Part mounted on FR-4 PC board with recommended pad layout
2. Short duration test pulse used to minimize self-heating effect.
01-Jun-2004 Rev. B
Page 1 of 2
1N4448W
Elektronische Bauelemente
Surface Mount Fast Switching Diode
RATINGS AND CHARACTERISTIC CURVES (1N4448W)
I
F
, INSTANTANEOUS FORWAR DCURRENT (mA)
300
1000
P
D
, POWER DISSIPATION (mW)
100
200
10
1.0
100
0.1
0
0
25
50
75
100
125
150
0.01
0
1
2
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Forward Characteristics
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
10,000
I
R
, LEAKAGE CURRENT (nA)
1000
100
10
V
R
= 20V
1
0
100
200
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 Leakage Current vs Junction T
emperature
01-Jun-2004 Rev. B
Page 2 of 2
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