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FR201G

产品描述2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
产品类别半导体    分立半导体   
文件大小64KB,共2页
制造商YEA SHIN TECHNOLOGY CO.,LTD
官网地址http://www.yeashin.com/
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FR201G概述

2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

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DATA SHEET
SEMICONDUCTOR
FAST RECOVERY GLASS PASSIVATION RECTIFI ER
VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes
FEATURES
High current capability
Plastic package has Underwriters Laboratory
Flammability Classification 94V -O utilizing
Flame Retardant Epoxy Molding Compound
2.0 ampere operation at TA=55
°C
with no thermal runaway
Exceeds environmental standards of M IL-S-19500/228
Fast sw itching for high ef ficiency
Low leakage
High temperature soldering : 260 °C /10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request.
.300 (7.6)
.230 (5.8)
.140 (3.6)
.104 (2.6)
DIA.
1.0 (25.4)
M IN.
FR201G~FR207G
DO-15
Unit:inch(mm)
MECHANICAL DATA
Ca se: Molde dpl astic , DO-15
Terminals: Phated axial leads, solderable per MIL-STD- 202,
Method 208
Polarity : Color band denotes cathode
Mounting Position: A ny
.034 (. 86
)
.028 (. 1)
7
DIA.
1.0 (25.4)
M IN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FR201G
Peak Reverse Voltage, Repetitiv e; VRM
Maximum RMS Voltage
Max imum DC Blocking Voltage
Maximum Average Forward Rectif ied
Current .375"(9 .5mm) Lead Length at TA=55
°C
Peak Forward Surge Current, IFM(surge) 8 .3ms ec.
single half si ne-wave superimposed on rated load
(JEDEC method)
Maximum For ward Voltage at 2.0A DC
Maximum Reverse Current TJ=25
°C
at Rated DC Blocking Voltage TJ=100
°C
Typical Junction capacitance (Note 1) CJ
Typical Thermal Resistance (Note 3 ) RθJA
Maximum Reverse Recovery Time(Note 2)
Operating and Storage Temperature Range T J,TSTG
FR202G
100
70
100
FR203G
200
140
200
FR204G
400
280
400
2.0
FR205G
600
420
600
FR206G
800
560
800
FR207G
1000
700
1000
UNITS
V
V
V
A
50
35
50
70.0
A
1.30
5.0
500
35
22
150
-55 to +150
250
500
V
µA
µA
P
F
°C/W
ns
°C
NOTES :
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A
3. Thermal Resistance from Junction to Ambient and from junction to lead at 0.375"(9.5mm) lead length P.C.B. mounted.
http://www.yeashin.com
1
REV.02 20150105

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