DATA SHEET
SEMICONDUCTOR
FAST SWITCHING SURFACE MOUNT RECTIFIER
VOLTAGE- 50 to 1000 Volts CURRENT - 1.0 Amperes
FEATURES
•
For surface mounted applications
•
Low profile package
•
Built-in strain reli ef
•
Easy pick and pl ace
•
Fast Recovery times for high ef ficiency
•
Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
.083(2. 11)
.075(1.9 1)
.155 (3. )
94
.130(3.30)
FR1A THRU FR1M
SMB/DO-214AA
Unit:inch(mm)
•
Glass passivated junction
•
High temperature soldering : 260 °C /10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directiv e request.
.185(4.70)
.160(4.06)
.012(.305 )
.006(.15 2 )
MECHANICAL DATA
•
Case: JEDEC DO-214AA molded pl astic
•
Terminals: Solder plated, solderable per MIL-STD-750 ,
•
Method 2026
•
Polarity : Indicated by cathode band
•
Standard packaging: 12mm tape (EIA-481)
.
096(2.44)
.083(2.13)
.012(.31)
.006(.15)
.050(1.27)
.030(0.76)
.008(.20
3
)
.002(.051)
.220(5.59)
.200(5.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOLS FR1A
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maxi mum DC Blocking Voltage
Maximum Average Forward Rect if ied Current ,
at TL=55°C
Peak For ward Surge Current 8.3ms single half sine- wave
superimposed on rated load (J EDEC method)
Maximum Instanta neous Forward Vol tage at 1.0A
Maxi mum DC Reverse Cur rent T A=25°C
at Rated DC Blocking Voltage TA=125°C
Maximum Reverse Recovery Time(Note 1) TJ=25°C
Typical Junction Capacitance (Note 2)
Maximum Thermal Resistance(Note 3)
Operati ng and Storage Tempe rature Range
FR1B
100
70
100
FR1D
200
140
200
FR1G
400
280
400
1.0
FR1J
600
420
600
FR1K
800
560
800
FR1M
1000
700
1000
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I(AV)
50
35
50
I
FSM
V
F
I
R
T
RR
C
J
RӨJL
T
J
,T
STG
150
30.
0
1.3
5.0
150
250
15.0
30.
0
-55 to +150
500
A
V
µA
ns
pF
°C / w
°C
NOTES :
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and applied Vr = 4.0 volts.
3. 8.0 mm2 ( .013mm thick ) land areas.
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REV.03 20150105
RATING AND CHARACTERISTIC CURVES
FR1A THRU FR1M
AVERAGE FORWARD
RECTIFIED CURRENT
AMPERES
1.6
1.4
1.2
1.0
.8
.6
.4
.2
0
55
SINGLE PHASE HALF WAVE
RESISTIVE OR INDUCTIVE
P.C.B MOUNTED ON
0.315×0.315"(8.0×8.0mm)
PAD AREAS
CAPACITANCE, pF
10
TJ = 25
°C
150
1
1
10
100
LEAD TEMPERATURE,
• •
REVERSE VOLTAGE, Vdc
Fig. 1-FORWARD CURRENT DERATING CURVE
Fig. 2-TYPICAL JUNCTION CAPACITANCE
INSTANTANEOUS FORWARD CURRENT, AMPERES
10
PULSE WIDTH = 300
ns
1%DUTY CYCLE
1
PEAK FORWARD SURGE CURRENT,
AMPERES
30
25
20
15
10
5
8.3ms SINGLE HALF SINE WAVE
JEDEC METHOD
TJ = 25
°C
0.1
1
2
5
10
20
50
100
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
NUMBER OF CYCLES AT 60Hz
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig. 3-PEAK FORWARD SURGE CURRENT
Fig. 4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
NONINDUCTIVE
10
NONINDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
t
rr
+0.5A
0
-0.25
(+)
50Vdc
(approx)
(-)
DUT
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 5-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
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REV.03 20150105
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