Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
LY62L6416B
Issue Date
Jan.13.2020
Mar.11.2020
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Revised
TIMING WAVEFORMS
of
WRITE CYCLE
in page 7 & 8
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
LY62L6416B
FEATURES
Fast access time : 45/55ns
Low power consumption:
Operating current : 12/10mA (TYP.)
Standby current : 1A (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400mil TSOP II
48-ball 6mm x 8mm TFBGA
The LY62L6416B is a 1,048,576-bit low power
CMOS static random access memory organized as
65,536 words by 16 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62L6416B is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY62L6416B operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY62L6416B
LY62L6416B(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
V
CC
Range
2.7 ~ 3.6V
2.7 ~ 3.6V
Speed
45/55ns
45/55ns
Power Dissipation
Standby(I
SB1
,
TYP.)
Operating(I
CC
,TYP.)
1µA
12/10mA
1µA
12/10mA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
PIN DESCRIPTION
SYMBOL
A0 - A15
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
A0-A15
DECODER
64Kx16
MEMORY ARRAY
DQ0 – DQ15 Data Inputs/Outputs
CE#
WE#
OE#
LB#
UB#
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
V
CC
I/O DATA
CIRCUIT
COLUMN I/O
V
SS
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
LY62L6416B
PIN CONFIGURATION
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
LY62L6416B
UNIT
V
V
℃
℃
W
mA
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
L
L
L
L
L
OE#
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
H
H
H
H
H
L
L
L
X
H
L
X
L
H
L
L
H
L
UB#
X
H
X
L
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
D
IN
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
Rev. 1.1
64K X 16 BIT LOW POWER CMOS SRAM
LY62L6416B
TYP.
*4
3.0
-
-
-
-
2.7
-
12
10
3
1
1
1
1
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
20
17
5
3
3
10
15
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
µA
µA
µA
µA
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
Input High Voltage
V
IH*1
Input Low Voltage
V
IL*2
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
-45
I
CC
CE#
≦
0.2V, I
I/O
= 0mA
Others at 0.2V or V
CC
-0.2V -55
Average Operating
Power supply Current
Cycle time = 1µs
I
CC1
CE# = 0.2V , I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
SL
*5
25
℃
CE#
≧
V
CC
- 0.2V
SLI
*5
40
℃
Standby Power
Others at 0.2V or
I
SB1
Supply Current
SL
V
CC
- 0.2V
SLI
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. This parameter is measured at V
CC
= 3.0V
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
-
-
-
-
CAPACITANCE
(T
A
= 25
℃
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -1mA/2mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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