CZD41C
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Monolithic Construction With Built–in Base–Emitter Resistors
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Designed for General Purpose Amplifier and Low Speed
S witching Applications.
TO-252 (D-Pack)
A
B
C
D
GE
PACKAGE INFORMATION
Package
TO-252
MPQ
2.5K
Leader Size
Collector
K
HF
N
O
P
13 inch
1
Base
2
REF.
M
J
3
Emitter
A
B
C
D
E
F
G
H
Millimeter
Min.
Max.
6.35
6.90
4.95
5.50
2.10
2.50
0.43
0.9
6.0
7.5
2.80 REF
5.40
6.40
0.60
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.64
1.14
0.50
1.14
1.3
1.8
0
0.13
0.58REF.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Power Dissipation
Junction and Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
,T
STG
Ratings
100
100
5
6
1.25
150, -65 ~ 150
Unit
V
V
V
A
W
℃
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
1
Symbol
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CEO
I
EBO
h
FE
1
Min.
100
100
5
-
-
30
15
-
-
3
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
0.5
-
75
1.5
2
-
Unit
V
V
V
µA
mA
Test Conditions
I
C
=100µA, I
E
=0
I
C
=30mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=0.3A
V
CE
=4V, I
C
=3A
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
1
V
CE(sat)
V
BE(on)
f
T
V
V
MHz
I
C
=6A, I
B
=0.6A
V
CE
=4V, I
C
=6A
V
CE
=10V, I
C
= 500mA,
f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Oct-2014 Rev. A
Page 1 of 2
CZD41C
Elektronische Bauelemente
NPN Epitaxial Planar Silicon Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Oct-2014 Rev. A
Page 2 of 2
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