Preliminary
Datasheet
RJH60D2DPP-M0
600V - 12A - IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.7 V typ. (at I
C
= 12 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (100 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 80 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 12 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0160EJ0400
Rev.4.00
Apr 19, 2012
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
G
1. Gate
2. Collector
3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
Note2
P
C
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
25
12
50
12
50
34
3.7
4.9
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0160EJ0400 Rev.4.00
Apr 19, 2012
Page 1 of 9
RJH60D2DPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
FRD Forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
Symbol
V
BR(CES)
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
V
F
t
rr
Q
rr
I
rr
Min
600
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
—
—
Typ
—
—
—
—
1.7
2.2
430
40
12
19
4
7
32
13
85
80
0.10
0.16
0.26
5.0
1.2
100
0.2
5.0
Max
—
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
Unit
V
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
V
ns
C
A
Test Conditions
I
C
=10
A,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 12 A, V
GE
= 15 V
Note3
I
C
= 25 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 12 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 12 A
Rg = 5
Inductive load
V
CC
360 V, V
GE
= 15 V
I
F
= 12 A
Note3
I
F
= 12 A
di
F
/dt = 100 A/s
R07DS0160EJ0400 Rev.4.00
Apr 19, 2012
Page 2 of 9
RJH60D2DPP-M0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
50
30
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
40
Collector Current I
C
(A)
25
20
15
10
5
0
30
20
10
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
PW
Turn-off SOA
60
Collector Current I
C
(A)
10
μ
s
10
μ
s
Collector Current I
C
(A)
1000
10
0
=
50
40
30
20
10
0
1
0.1
Tc = 25°C
Single pulse
10
100
0.01
1
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
IGBT Output Characteristics (Typical)
50
50
Tc = 25
°
C
Pulse Test
40
15 V
18 V
10 V
12 V
IGBT Output Characteristics (Typical)
Tc = 150
°
C
Pulse Test
40
12 V
30
15 V
18 V
20
V
GE
= 8 V
10 V
Collector Current I
C
(A)
30
20
V
GE
= 8 V
10
Collector Current I
C
(A)
5
10
0
0
1
2
3
4
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0160EJ0400 Rev.4.00
Apr 19, 2012
Page 3 of 9
RJH60D2DPP-M0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 25
°
C
Pulse Test
4
I
C
= 12 A
25 A
3
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
I
C
= 12 A
4
25 A
3
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
2
2
Tc = 150
°
C
Pulse Test
1
4
8
12
16
20
1
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Transfer Characteristics (Typical)
50
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
4.0
3.5
3.0
I
C
= 25 A
2.5
2.0
1.5
1.0
−25
12 A
6A
V
GE
= 15 V
Pulse Test
Collector Current I
C
(A)
V
CE
= 10 V
Pulse Test
40
Tc = 25
°
C
30
150
°
C
20
10
0
0
4
8
12
16
20
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
8
Case Temparature Tc (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
8
I
C
= 10 mA
Collector Current I
C(RSM)
(A)
6
0
Collector current wave
(Square wave)
6
4
4
1 mA
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
2
Tj = 150°C, Tc = 100°C
V
CE
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
duty = 50%
10
100
1000
0
1
Case Temparature Tc (°C)
Frequency f (kHz)
R07DS0160EJ0400 Rev.4.00
Apr 19, 2012
Page 4 of 9
RJH60D2DPP-M0
Switching Characteristics (Typical) (1)
Preliminary
Switching Characteristics (Typical) (2)
Swithing Energy Losses E (mJ)
1000
10
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
Switching Times t (ns)
tf
100
td(off)
td(on)
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
10
100
1
Eoff
0.1
Eon
0.01
1
10
100
1
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Tc = 150
°
C
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
Swithing Energy Losses E (mJ)
1
Switching Time t (ns)
Eoff
tf
100
td(off)
td(on)
tr
10
1
10
100
0.1
Eon
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Tc = 150
°
C
0.01
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Rg = 5
Ω
1
Eoff
0.1
Eon
tf
100
td(off)
td(on)
tr
10
25
50
75
100
125
150
V
CC
= 300 V, V
GE
= 15 V
I
C
=12 A, Rg = 5
Ω
0.01
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0160EJ0400 Rev.4.00
Apr 19, 2012
Page 5 of 9
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