Preliminary
Datasheet
RJK5012DPP-E0
500V - 12A - MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.515
typ. (at I
D
= 6 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
R07DS0561EJ0100
Rev.1.00
Jun 21, 2012
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
10
s,
duty cycle
1%
Value at Tc = 25C
STch = 25C, Tch
150C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
I
DNote4
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
ch-c
Tch
Tstg
Note2
Ratings
500
30
12
24
12
24
4
0.88
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 1 of 6
RJK5012DPP-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.515
1100
120
15
30
23
77
16
29
5.5
13
0.89
280
Max
—
1
0.1
4.5
0.620
—
—
—
—
—
—
—
—
—
—
1.50
—
Unit
V
A
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 6 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 6 A
V
GS
= 10 V
R
L
= 41.6
Rg = 10
V
DD
= 400 V
V
GS
= 10 V
I
D
= 12 A
I
F
= 12 A, V
GS
= 0
Note5
I
F
= 12 A, V
GS
= 0
di
F
/dt = 100 A/s
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 2 of 6
RJK5012DPP-E0
Preliminary
Main Characteristics
Maximum Safe Operation Area
100
10
PW
Typical Output Characteristics
20
Ta = 25°C
Pulse Test
6V
7V
10 V
5.6 V
12
5.4 V
8
5.2 V
4
0
5.8 V
μ
s
Drain Current I
D
(A)
10
0
μ
s
1
Operation in this
area is limited by
R
DS(on)
Tc = 25°C
1 shot
1
10
100
1000
0.1
Drain Current I
D
(A)
10
=
16
0.01
V
GS
= 5 V
0.001
0.1
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
1
Typical Transfer Characteristics
100
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
10
0.3
1
Tc = 75°C
25°C
−25°C
0.1
0
2
4
6
8
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
2.0
V
GS
= 10 V
Pulse Test
1.6
1000
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
1.2
I
D
= 12 A
0.8
6A
0.4
0
−25
3A
100
10
0
25
50
75
100 125 150
1
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
100
Case Temperature Tc (°C)
Reverse Drain Current
I
DR
(A)
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 3 of 6
RJK5012DPP-E0
Typical Capacitance vs.
Drain to Source Voltage
Preliminary
Dynamic Input Characteristics (Typical)
V
DS
(V)
V
GS
= 0
f = 1 MHz
I
D
= 12 A
Ta = 25°C
V
DD
= 100 V
250 V
400 V
V
DS
V
GS
Capacitance C (pF)
1000
Ciss
600
12
Drain to Source Voltage
100
Coss
400
8
10
Ta = 25°C
1
0
100
Crss
200
V
DD
= 400 V
250 V
100 V
8
16
24
32
4
0
0
0
40
200
300
Drain to Source Voltage
V
DS
(V)
Gate Charge
Qg (nC)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
20
5
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
I
DR
(A)
Gate to Source Cutoff Voltage
V
GS(off)
(V)
16
V
GS
= 0
Ta = 25°C
Pulse Test
I
D
= 10 mA
4
1 mA
Reverse Drain Current
12
3
0.1 mA
2
8
4
0
0
0.4
0.8
1.2
1.6
2.0
1
V
DS
= 10 V
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage
V
SD
(V)
Case Temperature
Tc (°C)
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 4 of 6
Gate to Source Voltage
V
GS
(V)
10000
800
16
RJK5012DPP-E0
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
T
C
= 25°C
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
lse
1
0.0
ot Pu
h
1S
θch–c(t)
=
γ
S
(t)
• θch–c
θch–c
= 4.17°C/W, T
C
= 25°C
P
DM
D = PW
T
PW
T
10 m
100 m
1
10
100
0.01
100
μ
1m
Pulse Width
PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0561EJ0100 Rev.1.00
Jun 21, 2012
Page 5 of 6
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