NCE70R360D,NCE70R360,NCE70R360F
N-Channel
Super Junction Power MOSFET
Ⅱ
General Description
The
series of devices
use advanced super junction
technology and design to provide excellent R
DS(ON)
with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
V
DS
R
DS(ON) TYP.
I
D
700
360
11
V
mΩ
A
Features
●New
technology for high voltage device
●Low
on-resistance and low conduction losses
●small
package
●Ultra
Low Gate Charge cause lower driving requirements
●100%
Avalanche Tested
●ROHS
compliant
Application
●
●
●
Power factor correction（PFC）
Switched mode power supplies(SMPS)
Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
NCE70R360D
NCE70R360
NCE70R360F
Device Package
TO-263
TO-220
TO-220F
Marking
NCE70R360D
NCE70R360
NCE70R360F
TO-263
Table 1.
Absolute Maximum Ratings (T
C
=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V）
Gate-Source Voltage (
V
DS=
0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current
(Note 1)
TO-220
TO-220F
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
P
D
E
AS
I
AR
E
AR
NCE70R360D
NCE70R360
NCE70R360F
Unit
V
V
700
±30
11
7
33
121
0.97
280
5.5
0.5
11*
7*
33*
32.7
0.26
A
A
A
W
W/
°C
Maximum Power Dissipation(Tc=25
℃)
Single pulse avalanche energy
Avalanche current
(Note 1)
(Note 1)
Derate above 25
°C
(Note2)
mJ
A
Repetitive Avalanche energy
，t
AR
limited by T
jmax
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R360D,NCE70R360,NCE70R360F
Parameter
Drain Source voltage slope, V
DS
≤480
V,
Symbol
dv/dt
dv/dt
NCE70R360D
NCE70R360
50
15
NCE70R360F
V/ns
V/ns
Unit
Reverse diode dv/dt，
V
DS
≤480
V,I
SD
<I
D
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
T
J
,T
STG
-55...+150
°C
Table 2.
Thermal Characteristic
Parameter
Symbol
R
thJC
R
thJA
NCE70R360D
NCE70R360
1.03
62
NCE70R360F
3.82
80
Unit
°C /W
°C /W
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient
（Maximum）
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
rrm
Tj=25°C,I
F
=11A,di/dt=100A/μs
V
DD
=380V,I
D
=5.5A,
R
G
=6.8Ω,V
GS
=10V
V
GS
=0V I
D
=250μA
V
DS
=700V,V
GS
=0V
V
DS
=700V,V
GS
=0V
V
GS
=±30V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=7A
V
DS
= 20V, I
D
= 7A
V
DS
=50V,V
GS
=0V,
F=1.0MHz
Min
700
Typ
Max
Unit
V
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
2.
Tj=25℃,VDD=50V,VG=10V, R
G
=25Ω
T
C
=25°C
Tj=25°C,I
SD
=11A,V
GS
=0V
0.9
245
2.4
20
11
33
1.2
A
A
V
nS
uC
A
9
4
40
4.5
65
8
nS
nS
nS
nS
8
1030
85
4.5
23
5.7
8
2
40
S
pF
pF
pF
nC
nC
nC
Ω
0.05
1
100
±100
2.5
3
360
3.5
400
μA
μA
nA
V
mΩ
V
DS
=480V,I
D
=11A,
V
GS
=10V
f = 1 MHz open drain
Notes:
1.Repetitive Rating: Pulse width limited by maximum junction temperature
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R360D,NCE70R360,NCE70R360F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for
TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE70R360D,NCE70R360,NCE70R360F
Figure7. R
DS(ON)
vs Junction Temperature
Figure8. BV
DSS
vs Junction Temperature
Figure9. Maximum I
D
vs Junction Temperature
Figure10. Gate charge waveforms
Figure11. Capacitance
Figure12. Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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v1.0
NCE70R360D,NCE70R360,NCE70R360F
Figure13. Transient Thermal Impedance for
TO-220F
Wuxi NCE Power Semiconductor Co., Ltd
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v1.0
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