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NCE40P70K
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE40P70K uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge .This
device is well suited for high current load applications.
General Features
●
V
DS
=-40V,I
D
=-70A
R
DS(ON)
<10mΩ @ V
GS
=-10V
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
●
Special process technology for high ESD capability
Schematic diagram
Application
●
Power switch
●
Load switch in high current applications
●
DC/DC converters
Marking and pin assignment
100% UIS TESTED!
100%
∆Vds
TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
NCE40P70K
Device
NCE40P70K
Device Package
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
E
AS
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
-40
±20
-70
-35
-115
65
0.52
1020
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
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Thermal Characteristic
Thermal Resistance, Junction-to-Case(Note 2)
R
θJC
NCE40P70K
1.92
℃
/W
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
t
on
Condition
V
GS
=0V I
D
=-250μA
V
DS
=-40V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-20A
V
DS
=-10V,I
D
=-20A
Min
-40
-
-
-1.2
-
-
-
-
-
-
Typ
-
-
-
-1.9
7.5
50
6460
684
600
15
12
70
18
106
22
27
Max
-
-1
±100
-2.5
10
-
-
-
-
-
-
-
-
Unit
V
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
DS
=-20V,V
GS
=0V,
F=1.0MHz
V
DD
=-20V, R
L
=2Ω，
V
GS
=-10V,R
G
=1Ω
-
-
-
-
-
-
-
-
V
DS
=-20,I
D
=-20A,
V
GS
=-10V
V
GS
=0V,I
S
=-10A
TJ = 25°C, IF =- 10A
di/dt = -100A/μs(Note3)
-1.2
-
53
50
-70
V
A
nS
nC
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
5.
E
AS
condition: Tj=25℃,V
DD
=-20V,V
G
=-10V,L=1mH,Rg=25Ω,I
AS
=45A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Pb Free Product
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NCE40P70K
Test Circuit
1) E
AS
Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Pb Free Product
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Typical Electrical and Thermal Characteristics (Curves)
NCE40P70K
Normalized On-Resistance
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Rdson On-Resistance(mΩ)
I
s
- Reverse Drain Current (A)
Figure 5 Gate Charge
I
D
- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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NCE40P70K
C Capacitance (pF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 ID Current Derating vs Junction
Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
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