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NCE2333
D
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE2333 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
S
G
General Features
●
V
DS
= -12V,I
D
= -6A
R
DS(ON)
< 45mΩ @ V
GS
=-2.5V
R
DS(ON)
< 30mΩ @ V
GS
=-4.5V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
Schematic diagram
Marking and pin Assignment
Application
●
PWM applications
●
Load switch
●
Power management
SOT-23 top view
Package Marking And Ordering Information
Device Marking
2333
Device
NCE2333
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current -Continuous
I
D
Drain Current -Pulsed
(Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
Limit
-12
±12
-6
-20
1.8
-55 To 150
Unit
V
V
A
A
W
℃
69
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=-250μA
Min
-12
Typ
-
Max
-
Unit
V
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Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
I
S
V
GS
=0V,I
S
=-1.0A
-
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-6V,I
D
=-6A,V
GS
=-4.5V
V
DD
=-6V,I
D
=-1A ,
R
L
=6Ω,V
GEN
=-4.5V,R
g
=6Ω
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=-6V,V
GS
=0V,
F=1.0MHz
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-6A
V
GS
=-2.5V, I
D
=-5A
V
DS
=-5V,I
D
=-6A
I
DSS
I
GSS
V
DS
=-20V,V
GS
=0V
V
GS
=±12V,V
DS
=0V
-
-
NCE2333
-
-
-0.65
23
33
17
1100
390
300
25
45
72
60
11.5
1.5
3.2
-
-
-1
±100
-1.0
30
45
-
-
-
-
-
-
-
-
-
-
-
-1.2
6
μA
nA
V
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
-0.45
-
-
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics
t
d(on)
t
on
t
r
90%
NCE2333
t
off
t
f
90%
t
d(off)
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Rdson On-Resistance(Ω)
.
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE2333
Normalized On-Resistance
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(Ω)
Figure 8 Drain-Source On-Resistance
C Capacitance (pF)
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
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NCE2333
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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