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31DF1

产品描述1.6 A, 100 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小110KB,共2页
制造商SUNMATE
官网地址http://www.sunmate.tw/
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31DF1概述

1.6 A, 100 V, SILICON, RECTIFIER DIODE

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31DF1-31DF2
3.0A Axial Leaded Super Fast Rectifiers
Features
·
Low cost
·
Diffused junction
·
Low leakage
·
Low forward voltage drop
·
High current capability
·
Easily cleaned with alcohol,Isopropanol and
similar solvents
D
DO-201AD
Dim
A
B
C
D
Min
25.40
7.20
1.20
4.80
Max
¾
9.50
1.30
5.30
A
B
A
C
Mechanical Data
·
Case:JEDEC DO--201AD,molded plastic
·
Terminals: Axial lead ,solderable per
MIL-STD202,method 208
·
Polarity: Color band denotes cathode
·
Weight: 0.041ounces,1.15 grams
·
Mounting position: Any
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@ T
A
= 25°C unless otherwise specified
31DF1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
31DF2
200
140
200
3.0
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
125.0
A
Maximum instantaneous forw ard voltage
@ I
F
=1.6A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T =25
A
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
5.0
50.0
30
90
34
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
1 of 2

31DF1相似产品对比

31DF1 31DF2
描述 1.6 A, 100 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE

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