1N5711/1N6263
15mA Axial Leaded Schottky Barrier Diodes
Features
·
For general purpose applications
·
Metal-on-silicon Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing and coupling diodes for
fast switching and low logic level applications.
·
This diode is also available in the MiniMELF case with
type designation LL5711 and LL6263.
·
Pb / RoHS Free
A
B
A
D
DO-35
Dim
A
B
C
D
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
C
Mechanical Data
·
Case:
DO-35 Glass Case
·
Weight:
approx. 0.13g
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Parameter
Repetitive Peak Reverse Voltage
Power Dissipation (Infinite Heatsink)
Maximum Single Cycle Surge 10
µs
Square Wave
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
1N5711
1N6263
Symbol
V
RRM
P
D
I
FSM
R
θ
JA
T
J
T
S
Value
70
60
400
(1)
2
0.3
(1)
125
(1)
-55 to + 150
Min
70
60
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
(1)
Unit
V
mW
A
°C/mW
°C
°C
Max
-
-
200
0.41
1.0
2.0
2.2
1
Unit
V
nA
V
pF
ns
Parameter
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
Diode Capacitance
Reverse Recovery Time
Note:
Symbol
1N5711
1N6263
V
(BR)R
I
R
V
F
1N5711
1N6263
Cd
Trr
Test Condition
I
R
= 10
µA
V
R
= 50 V
I
F
= 1mA
I
F
= 15mA
V
R
= 0 V, f = 1MHz
I
F
= I
R
= 5mA,
recover to 0.1I
R
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature..
1 of 2
Typical variation of forward current
and forward voltage for primary conduction
through the schottky barrier
10
5
Forward Current , I
F
(mA)
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0
0.5
Forward Voltage , V
F
(V)
1
0
0
Forward Current , I
F
(mA)
80
100
Typical forward conduction curve
of combination schottky barrier
and PN junction guard ring
60
40
20
0.5
Forward Voltage , V
F
(V)
1
Typical capacitance curve as a
function of reverse voltage
Typical variation of reverse current
at various temperatures
2
Tj = 25
°
C
100
50
20
Reverse Current , I
R
(
µ
A)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
Ta = 125
°
C
Capacitance , Cd (pF)
1
Ta = 25
°
C
0
0
10
20
30
40
50
Reverse Voltage , V
R
(V)
0.01
0
10
20
30
40
50
Reverse Voltage , V
R
(V)
2of2
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