1N4151WS-V
150mA Surface Mount Small Signal Fast Switching Diode
Features
·
Silicon Epitaxial Planar Diode
·
Fast switching diode
·
This diode is also available in other
case styles including the DO35 case with the type
designation 1N4151, and the MiniMELF case with
the type designation LL4151.
·
Lead (Pb)-free component
·
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
C
H
B
A
M
L
K
J
Mechanical Data
·
Case:
SOD323 plastic case
·
Weight:
approx. 5.0 mg
·
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
SOD-323
Dim
Min
Max
A
0.25
0.35
B
1.20
1.40
C
2.30
2.70
H
1.60
1.80
J
0.00
0.10
K
1.0
1.1
L
0.20
0.40
M
0.10
0.15
0°
8°
α
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
Power dissipation
Parameter
Forward voltage
Leakage current
Reverse breakdown voltage
Capacitance
Reverse recovery time
T
amb
= 25 °C and f
≥
50 Hz
Test condition
@ T
A
= 25°C unless otherwise specified
Symbol
V
R
V
RM
I
F(AV)
Value
50
75
150
1)
Unit
V
V
mA
t < 1 s and T
j
= 25 °C
T
amb
= 25 °C
Test condition
I
F
= 50 mA
V
R
= 50 V
V
R
= 20 V, T
j
= 150 °C
I
R
= 5 µA (pulsed)
V
F
= V
R
= 0 V
I
F
= 10 mA to I
R
= 10 mA
to I
R
= 1 mA
I
F
= 10 mA to I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
Ω
t
rr
t
rr
η½
V
F
I
R
I
R
I
FSM
P
tot
Symbol
Min
500
410
1)
Typ.
Max
1.0
50
50
75
2
4
2
0.45
mA
mW
Unit
V
nA
µA
V
pF
ns
ns
V
(BR)R
Rectification efficiency
1)
f = 100 MHz, V
RF
= 2 V
Valid provided that electrodes are kept at ambient temperature.
1 of 2
1000
100
T
j
= 100
°
C
C
tot
- Relative Capacitance (pF)
1.1
1.0
0.9
I
F
- Forward Current (mA)
T
j
= 25
°
C
f = 1 MHz
10
25
°
C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.8
0.7
0
2
4
6
8
10
18742
V
F
- Forward
Voltage
(V)
18664
V
R
- Reverse
Voltage
(V)
Figure 1. Forward Current vs. Forward Voltage
10000
Figure 4. Relative Capacitance vs. Reverse Voltage
10000
T
j
= 25
°
C
f = 1 kHz
r
f
- Dynamic Forward Resistance
(Ω)
1000
I
R
- Leakage Current (nA)
1000
100
100
10
10
V
R
= 50
V
1
1
0.01
18662
0.1
1
10
I
F
- Forward Current (mA)
100
18744
0 20
40 60
80
100 120 140 160 180 200
T
j
- Junction Temperature (°C)
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 5. Leakage Current vs. Junction Temperature
P
tot
- Admissible Power Dissipation (mW)
1000
800
600
400
200
0
0 20 40 60
80
100 120 140 160180 200
T
amb
- Ambient Temperature (°C)
18743
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
100
I
½
= t
p
/T
t
p
I
FRM
T = 1/f
p
I
FRM
- Admissible Repetitive
Peak Forward Current (A)
10
½
= 0
0.1
0.2
t
T
1
0.5
18709
10
-5
10
-4
10
-3
10
-2
t
p
- Pulse Length (s)
10
-1
1
10
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
2of2
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