Preliminary
Datasheet
RJH60V2BDPE
600V - 12A - IGBT
Application: Inverter
Features
Short circuit withstand time (6
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 12 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 75 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 12 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0744EJ0100
Rev.1.00
Apr 25, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
G
1
2
3
E
1. Gate
2. Collector
3. Emitter
4. Collector
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
Note2
P
C
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
25
12
50
12
50
63
1.98
1.75
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
R07DS0744EJ0100 Rev.1.00
Apr 25, 2012
Page 1 of 9
RJH60V2BDPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
V
(BR)CES
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
Min
600
—
—
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
Typ
—
—
—
—
1.6
2.2
450
37
18
32
5
17
33
15
65
75
0.03
0.18
0.21
6
Max
—
5
±1
7.5
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
Test Conditions
I
C
=10
A,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 12 A, V
GE
= 15 V
Note3
I
C
= 25 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 12 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 12 A
Rg = 5
Inductive load
Tc = 100
C
V
CC
360 V, V
GE
= 15 V
I
F
= 12 A
Note3
I
F
= 12 A
di
F
/dt = 100 A/s
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
V
F
t
rr
Q
rr
I
rr
—
—
—
—
2.5
25
0.02
1.2
—
—
—
—
V
ns
C
A
R07DS0744EJ0100 Rev.1.00
Apr 25, 2012
Page 2 of 9
RJH60V2BDPE
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
80
30
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
60
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
25
20
15
10
5
0
0
25
50
75
100 125 150 175
40
20
0
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
100
80
Turn-off Safe Operation Area
PW
Collector Current I
C
(A)
10
10
0
μ
10
s
μ
s
Collector Current I
C
(A)
1000
=
60
1
40
0.1
Tc = 25°C
Single pulse
20
0.01
1
0
10
100
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
50
Tc = 25
°
C
Pulse Test
15 V
50
Typical Output Characteristics
Tc = 150
°
C
Pulse Test
Collector Current I
C
(A)
40
Collector Current I
C
(A)
15 V
40
30
12 V
30
12 V
20
10 V
10
V
GE
= 8 V
0
20
10 V
10
V
GE
= 8 V
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0744EJ0100 Rev.1.00
Apr 25, 2012
Page 3 of 9
RJH60V2BDPE
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Tc = 150
°
C
Pulse Test
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
4
4
3
I
C
= 25 A
2
12 A
1
8
10
12
14
16
18
20
3
I
C
= 25 A
2
12 A
1
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
4
V
GE
= 15 V
Pulse Test
3
I
C
= 25 A
Typical Transfer Characteristics
50
Collector Current I
C
(A)
40
Tc = 25°C
30
150°C
2
12 A
20
1
10
0
0
V
CE
= 10 V
Pulse Test
4
8
12
16
20
0
−25
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
10
Case Temparature Tc (°C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
Collector Current I
C(RSM)
(A)
8
I
C
= 10 mA
8
0
Collector current wave
(Square wave)
6
1 mA
4
6
4
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
2
0
1
Tj = 125°C, Tc = 90°C
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
duty = 50%
10
100
1000
Case Temparature Tc (°C)
Frequency f (kHz)
R07DS0744EJ0100 Rev.1.00
Apr 25, 2012
Page 4 of 9
RJH60V2BDPE
Switching Characteristics (Typical) (1)
Swithing Energy Losses E (mJ)
1000
Preliminary
Switching Characteristics (Typical) (2)
10
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
Switching Times t (ns)
tf
100
td(off)
td(on)
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
10
100
0.1
Eoff
Eon
1
0.01
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Tc = 150
°
C
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1
Swithing Energy Losses E (mJ)
1000
Switching Times t (ns)
Eoff
Eon
tf
100
td(off)
td(on)
tr
10
1
10
100
0.1
0.01
1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Tc = 150
°
C
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
1
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 12 A, Rg = 5
Ω
Eoff
tf
100
td(off)
td(on)
tr
10
25
0.1
Eon
V
CC
= 300 V, V
GE
= 15 V
I
C
=12 A, Rg = 5
Ω
0.01
25
50
75
100
125
150
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0744EJ0100 Rev.1.00
Apr 25, 2012
Page 5 of 9
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