BYX82-BYX86
2.0A Axial Leaded Silicon Mesa Rectifiers
Features
·
Glass passivated junction
·
Hermetically sealed package
·
Low reverse current
·
High surge current loading
D
C
A
B
A
Mechanical Data
·
Case: Molded Plastic
Dim
A
B
C
D
DO-15
Min
25.40
5.50
0.686
2.60
Max
¾
7.62
0.889
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
@ T
A
= 25°C unless otherwise specified
Type
BYX82
BYX83
BYX84
BYX85
BYX86
Peak forward surge current
t
p
=10ms,
half sinewave
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
Value
200
400
600
800
1000
50
Unit
V
V
V
V
V
A
Repetitive peak forward current
Average forward current
T
amb
45
°
C
i
2
*t–rating
Junction and storage temperature range
Parameter
Test Conditions
Forward voltage
I
F
=1A
Reverse current
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
Diode capacitance
V
R
=4V, f=0.47MHz
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Reverse recovery charge
I
F
=I
R
=1A, di/dt=5A/
m
s
x
Type
I
FRM
I
FAV
i
2
*t
T
j
=T
stg
Symbol Min
V
F
I
R
I
R
C
D
t
rr
Q
rr
10
A
2
A
8
A
2
*s
–65...+175
°
C
Typ Max Unit
0.9
1.0
V
0.1
1
m
A
10
25
m
A
20
pF
2
4
m
s
3
6
m
C
1 of 3
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
120
l
100
80
60
40
20
Scattering Limits
0
0
5
10
15
20
25
30
94 9573
10
l
I
F
– Forward Current ( A )
1
T
j
=175°C
T
L
=constant
T
j
= 25°C
0.1
0.01
0
0.6
1.2
1.8
2.4
3.0
l – Lead Length ( mm )
V
F
– Forward Voltage ( V )
94 9572
Figure 1. Max. Thermal Resistance vs. Lead Length
240
T
j
– Junction Temperature (
°
C )
200
160
120
80
40
0
0
94 9579
Figure 3. Forward Current vs. Forward Voltage
30
C
D
– Diode Capacitance ( pF )
R
thJA
100K/W
V
R RM
V
R
BYX
82
BYX
83
BYX
84
BYX
85
BYX
86
400
800
1200
1600
v
R
thJA
57K/W
v
R
thJA
35K/W
24
v
18
12
6
0
0.1
1
f = 470kHz
T
j
= 25°C
10
100
Reverse / Repetitive Peak Reverse Voltage ( V )
94 9574
V
R
– Reverse Voltage ( V )
Figure 2. Junction Temperature vs.
Reverse/Repetitive Peak Reverse Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
V
RRM
200V
R
thJA
100K/W
100
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
0.02
0.01
1
10
–3
Single Pulse
10
–2
10
–1
10
0
10
1
10
0
10
1
I
FRM
– Repetitive Peak
Forward Current ( A )
10
2
T
amb
= 25°C
T
amb
= 100°C
T
amb
= 125°C
T
amb
= 150°C
T
amb
= 45°C
T
amb
= 70°C
v
v
10
94 9575
t
p
– Pulse Length ( s )
Figure 5. Thermal Response
2of3
Z
thp
– Thermal Resistance for Pulse Cond. (K/W)
1000
V
RRM
1000V
t 10
m
s
R
thJA
100K/W
100
t
p
/T=0.5
t
p
/T=0.2
t
p
/T=0.1
t
p
/T=0.05
0.02
0.01
1
10
–3
Single Pulse
10
–2
10
–1
10
0
10
1
10
–1
T
amb
= 45°C
T
amb
= 60°C
T
amb
= 70°C
v
v
v
T
amb
= 25°C
10
T
amb
= 100°C
94 9578
t
p
– Pulse Length ( s )
10
0
I
FRM
– Repetitive Peak
Forward Current ( A )
10
1
Figure 6. Thermal Response
3of3
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