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BYM13-20

产品描述1 A, 20 V, SILICON, SIGNAL DIODE, DO-213AB
产品类别半导体    分立半导体   
文件大小223KB,共2页
制造商SUNMATE
官网地址http://www.sunmate.tw/
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BYM13-20概述

1 A, 20 V, SILICON, SIGNAL DIODE, DO-213AB

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BYM13-20—BYM13-60
1.0A Surface Mount Schottky Barrier Rectifier
Features
·
·
·
·
·
·
·
MELF Schottky rectifier
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
1st BAND
2cnd BAND
DO-213AB
SOLDERABLE ENDS
D2
·
Solder dip 260 °C, 40 s
·
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
D1=
0.105
0.095
(2.67)
(2.41)
Mechanical Data
·
Case:
DO-213AB
Epoxy meets UL 94V-0 flammability rating
·
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
·
Polarity:
Two bands indicate cathode end 1st band
denotes device type 2nd band denotes voltage type
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
0
D2 = D1 + 0.008 (0.20)
-
Maximum Ratings and Electrical Characteristics
PARAMETER
Denotes Schottky devices: 1st band is orange
Polarity color bands (2nd band) voltage type
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
PARAMETER
Maximum instantaneous
forward voltage
(1)
Maximum reverse
current at rated DC
blocking voltage
(1)
Typical junction
capacitance
TEST CONDITIONS
1.0 A
T
A
= 25 °C
T
A
= 100 °C
4.0 V, 1.0 MHz
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
SYMBOL
V
F
@ T
A
= 25°C unless otherwise specified
SYMBOL BYM13-20 BYM13-30 BYM13-40 BYM13-50 BYM13-60
SGL41-20
Gray
20
14
20
SGL41-30
Red
30
21
30
SGL41-40
Orange
40
28
40
1.0
30
10 000
- 55 to + 125
- 55 to + 150
BYM13-20 BYM13-30 BYM13-40 BYM13-50 BYM13-60
SGL41-20
SGL41-30
0.50
0.5
I
R
10
110
5.0
80
SGL41-40
SGL41-50
SGL41-60
- 55 to + 150
SGL41-50
Yellow
50
35
50
SGL41-60
Green
60
42
60
UNIT
V
V
V
A
A
V/µs
°C
°C
UNIT
V
0.70
mA
C
J
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
1 of 2

BYM13-20相似产品对比

BYM13-20 BYM13-50 BYM13-60 BYM13-30 BYM13-40
描述 1 A, 20 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 60 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 30 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 40 V, SILICON, SIGNAL DIODE, DO-213AB

 
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