Preliminary
Datasheet
RJH60D7BDPQ-E0
600V - 50A - IGBT
Application: Inverter
Features
Short circuit withstand time (5
s
typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 50 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 50 A, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0795EJ0200
Rev.2.00
Jul 13, 2012
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tc = 25C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
i
DF
(peak)
Note1
P
C Note2
j-c
Note2
j-cd
Note2
Tj
Tstg
Ratings
600
±30
90
50
200
30
120
300
0.42
1.1
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0795EJ0200 Rev.2.00
Jul 13, 2012
Page 1 of 9
RJH60D7BDPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test
Symbol
V
BR(CES)
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
V
F
t
rr
Q
rr
I
rr
Min
600
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
—
—
Typ
—
—
—
—
1.6
1.8
3150
180
95
125
25
50
60
50
180
50
0.7
1.4
2.0
5.0
2.5
25
32
1.5
Max
—
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
—
—
Unit
V
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
s
V
ns
C
A
Test Conditions
I
C
=10
A,
V
GE
= 0
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15 V
Note3
I
C
= 90 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 50 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 50 A
Rg = 5
(Inductive load)
V
CC
360 V, V
GE
= 15 V
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/s
R07DS0795EJ0200 Rev.2.00
Jul 13, 2012
Page 2 of 9
RJH60D7BDPQ-E0
Preliminary
Main Characteristics
Collector
Dissipation vs.
Case
Temperature
400
120
Maximum DC
Collector Current
vs.
Case
Temperature
Collector
Dissipation
Pc (W)
300
Collector Current
I
C
(A)
100
80
60
40
20
0
200
100
0
0
25
50
75
100 125 150 175
0
25
50
75
100 125 150 175
Case
Temperature Tc
(°C)
Case
Temperature Tc
(°C)
Maximum
Safe Operation Area
1000
300
Turn-off
SOA
Collector Current
I
C
(A)
=
100
10
0
10
μ
s
μ
s
Collector Current
I
C
(A)
P
W
250
200
150
100
50
0
10
1
Tc =
25°C
Single
pulse
10
100
1000
0.1
1
0
200
400
600
800
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
Typical
Output Characteristics
Pulse
Test
Tc =
25
°
C
11
V
Typical
Output Characteristics
Pulse
Test
Tc =
150
°
C
15
V
11
V
10
V
120
9V
80
V
GE
= 8 V
40
Collector Current
I
C
(A)
120
15
V
9V
80
V
GE
= 8 V
40
0
0
1
2
3
4
5
Collector Current
I
C
(A)
160
10
V
160
0
0
1
2
3
4
5
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
R07DS0795EJ0200 Rev.2.00
Jul 13, 2012
Page 3 of 9
RJH60D7BDPQ-E0
Collector to
Emitter
Saturation
Voltage
vs.
Gate to
Emitter Voltage
(Typical)
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
5
Tc =
25
°
C
Pulse
Test
4
I
C
= 50
A
90
A
3
Preliminary
Collector to
Emitter
Saturation
Voltage
vs.
Gate to
Emitter Voltage
(Typical)
5
Tc =
150
°
C
Pulse
Test
4
I
C
= 50
A
90
A
3
2
2
1
4
8
12
16
20
1
4
8
12
16
20
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter Voltage V
GE
(V)
Collector to
Emitter
Saturation
Voltage
vs.
Case
Temparature
(Typical)
Collector to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
−25
50
A
25 A
V
GE
=
15
V
Pulse
Test
I
C
= 90
A
Typical Transfer
Characteristics
200
Collector Current
I
C
(A)
160
Tc =
25°C
150°C
120
80
40
V
CE
=
10
V
Pulse
Test
0
0
4
8
12
16
20
0
25
50
75
100 125 150
Gate to
Emitter Voltage V
GE
(V)
Gate to
Emitter
Cutoff
Voltage
vs.
Case
Temparature
(Typical)
10
30
Case
Temparature Tc
(
°
C)
Gate to
Emitter
Cutoff
Voltage V
GE(off)
(V)
Frequency
Characteristics (Typical)
Collector Current
I
C(RSM)
(A)
8
I
C
=
10 mA
25
0
20
15
10
Collector current
wave
(Square
wave)
6
4
1 mA
2
V
CE
=
10
V
Pulse
Test
0
−25
0
25
50
75
100 125 150
5 Tj =
125°C,
Tc = 90°C
V
CE
= 400 V, V
GE
=
15
V
Rg
= 5
Ω,
duty
= 50%
0
1
10
100
1000
Case
Temparature Tc
(°C)
Frequency f
(kHz)
R07DS0795EJ0200 Rev.2.00
Jul 13, 2012
Page 4 of 9
RJH60D7BDPQ-E0
Switching Characteristics (Typical) (1)
Preliminary
Switching Characteristics (Typical) (2)
td(off)
t
f
td(on)
100
tr
V
CC
=
300
V, V
GE
=
15
V
Rg
= 5
Ω,
Tc =
150
°
C
1
10
100
Swithing
Energy Losses E
(mJ)
1000
100
V
CC
=
300
V, V
GE
=
15
V
Rg
= 5
Ω,
Tc =
150
°
C
Switching
Times
t (ns)
10
1
E
on
E
off
0.1
10
0.01
1
10
100
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (3)
V
CC
=
300
V, V
GE
=
15
V
I
C
= 50
A,
Tc =
150
°
C
1000
Collector Current
I
C
(A)
(Inductive
load)
Switching Characteristics (Typical) (4)
Swithing
Energy Losses E
(mJ)
3000
10
Switching
Times
t (ns)
E
on
300
td(off)
100
tr
t
f
td(on)
30
1
10
100
1
E
off
0.1
1
V
CC
=
300
V, V
GE
=
15
V
I
C
= 50
A,
Tc =
150
°
C
10
100
Gate Resistance Rg (Ω)
(Inductive
load)
Gate Resistance Rg (Ω)
(Inductive
load)
Switching Characteristics (Typical) (5)
1000
Switching Characteristics (Typical) (6)
Swithing
Energy Losses E
(mJ)
Switching
Times
t (ns)
V
CC
=
300
V, V
GE
=
15
V
I
C
= 50
A, Rg
= 5
Ω
td(off)
tr
100
t
f
td(on)
10
V
CC
=
300
V, V
GE
=
15
V
I
C
= 50
A, Rg
= 5
Ω
E
off
1
E
on
10
25
50
75
100
125
150
0.1
25
50
75
100
125
150
Case
Temperature Tc
(°C)
(Inductive
load)
Case
Temperature Tc
(°C)
(Inductive
load)
R07DS0795EJ0200 Rev.2.00
Jul 13, 2012
Page 5 of 9
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