PZTA44
Elektronische Bauelemente
200mA , 400V
NPN Silicon Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
A
M
SOT-223
4
Top View
CB
1
2
3
K
E
L
D
PACKAGE INFORMATION
Package
SOT-223
MPQ
2.5K
Leader Size
13’ inch
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
H
REF.
G
H
J
K
L
M
J
Millimeter
Min.
Max.
-
0.10
-
-
0.25
0.35
-
-
2.30 REF.
2.90
3.10
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Current -Pulsed
Collector Power Dissipation
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
STG
Ratings
400
400
6
200
300
1
150, -65~150
Unit
V
V
V
mA
mA
W
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min.
400
400
6
-
-
40
50
45
40
-
Max.
-
-
-
100
100
-
200
-
-
0.4
0.5
0.75
0.85
-
7
180
Unit
V
V
V
nA
nA
Test Conditions
I
C
=0.1mA , I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 400V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 50mA
V
CE
= 10V, I
C
= 100mA
I
C
=1mA, I
B
= 0.1mA
DC current gain
1
h
FE
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector ca pacitance
Emitter capacitance
http://www.SeCoSGmbH.com/
1
V
CE(sat)
V
BE(on)
f
T
C
C
C
E
-
-
-
20
-
-
V
V
MHz
pF
pF
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
= 10V, I
C
=1mA
V
CE
= 10V, I
C
= 10mA,
f=100MHz
V
CB
=20V, I
E
=0, f=0MHz
V
CB
=0.5V, I
E
=0, f=0MHz
Any changes of specification will not be informed individually.
29-Jul-2014 Rev. A
Page 1 of 1
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