PZT559
Elektronische Bauelemente
RoHS Compliant Product
PNP Silicon Planar
High Current Transistor
SOT-223
Description
The PZT559 is designed for general
purpose switching and amplifier
applications.
Features
* Excellent Gain Characteristic Specified
Up To 3 Amps.
* 4 Amps Continuous Current, Up To
10 Amps Peak Current
* Very Low Saturation Voltages
5 5 9
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0C
10 C
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
MAXIMUM RATINGS* (T
amb
=25 C, unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Junction and Storage Temperature
o
o
Millimeter
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Parameter
Value
-180
-140
-6
-4
-10
3
-55~+150
Units
V
V
V
A
A
W
O
I
C
I
CM
P
D
T
J,
T
stg
C
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Symbol
BV
CBO
BV
CER
*BV
CEO
BV
EBO
I
CBO
I
CER
I
EBO
*V
CE
(sat)1
*V
CE
(sat)2
*V
CE
(sat)3
*V
CE
(sat)4
*V
BE
(sat)
*V
BE
(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
C
ob
T
on
T
off
Min
-180
-180
-140
-6
-
-
-
-
-
-
-
-
-
100
100
75
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
140
10
110
Max
-
-
-
-
-50
-50
-10
-60
-120
-150
-370
-1.11
-0.95
-
300
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
Test Conditions
I
C
=-100µA, I
E
=0
I
C
=-1µA, R
B
≦
1K
Ω
I
C
=-10mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-150V, I
E
=0
V
CB
=-150V,R
≦
1K
Ω
V
EB
=- 6V,I
C
=0
I
C
=-100m A,I
B
=-5mA
I
C
=-500 A,I
B
=-50mA
I
C
=-1A,I
B
=-100mA
I
C
=-3A,I
B
=-300mA
I
C
=-3A,I
B
=-300mA
I
C
=-3A,V
CE
=-5V
V
CE
=- 5 V, I
C
=-10 mA
V
CE
=- 5 V, I
C
=-1 A
V
CE
=- 5 V, I
C
=- 3A
V
CE
=- 5 V, I
C
=- 10 A
V
CE
=- 10 V, I
C
=-100mA, f=50MHz
,
V
CB
=-20 V , f=1MHz
V
CC
=-50V,I
C
=- 1A ,I
B1
=I
B2
=- 100mA
Any changing of specification will not be informed individual
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
V
V
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
http://www.SeCoSGmbH.com
40
-
68
-
-
On-Time
-
-
Off-Time
1030
*Measured under pulse condition. Pulse width
=
300
µ
s, Duty Cycle
≦
2%
MH z
pF
nS
01-Jun-2002 Rev. A
Page 1 of 2
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