PZT559A
Elektronische Bauelemente
PNP Silicon
Silicon Planar Medium Power Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The PZT559A is designed for general purpose switching
and amplifier applications.
SOT-223
FEATURES
4 Amps continuous current, up to 10 Amps peak current.
Excellent gain characteristic specified up to 3 Amps
Very low saturation voltages
MARKING
559A
Date code
REF.
Millimeter
Min.
Max.
6.30
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.60 REF.
0.60
0.80
0.02
0.10
0
°
10
°
REF.
G
H
J
K
L
M
N
Millimeter
Min.
Max.
0.02
0.10
1.50
2.00
0.25
0.35
0.85
1.05
2.30 REF.
2.90
3.10
13 TYP.
PACKAGE INFORMATION
Package
SOT-223
MPQ
2.5K
Leader Size
13’ inch
A
B
C
D
E
F
I
O
Collector
2
4
1
Base
3
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Total Power Dissipation
1
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
J
, T
STG
Ratings
-180
-140
-7
-4
-10
3
1.6
+150, -55~150
Unit
V
V
V
A
A
W
W
℃
Junction, Storage Temperature
Notes：
1. Surface mounted on 52mm x 52mm x 1.6mm copper pad of FR4 board.
2. Surface mounted on 25mm x 25mm x 1.6mm copper pad of FR4 board.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A
Page 1 of 4
PZT559A
Elektronische Bauelemente
PNP Silicon
Silicon Planar Medium Power Transistor
ELECTRICAL CHARACTERISTICS
(T
A
=25
°C
unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage
Increased Operating Voltage
Collector - Emitter Breakdown
Voltage
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
Min.
-180
-180
-140
-7
-
-
-
-
-
-
-
-
-
100
100
45
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-40
-55
-85
-250
-940
-830
225
200
80
5
120
33
42
636
Max.
-
-
-
-
-20
-20
-10
-60
-80
-120
-360
-1.04
-0.93
-
300
-
-
-
-
-
Unit
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
Test Conditions
I
C
= -100uA, I
E
=0
I
C
= -1uA, R
B
≦1K
I
C
= -10mA, I
B
=0
I
E
= -100uA, I
C
=0
V
CB
= -150V, I
E
=0
V
CB
= -150V, R≦1K
VEB= -6V, I
C
=0
I
C
= -100mA, I
B
= -5mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -3A, I
B
= -300mA
V
CE
= -5V, I
C
= -3A
V
CE
= -5V, I
C
= -10 mA
V
CE
= -5V, I
C
= -1A
V
CE
= -5V, I
C
= -3A
V
CE
= -5V, I
C
= -10A
V
CE
= -10V, I
C
= -100mA,
f=50 MHz
V
CB
= -10 V, f=1 MHz
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
= -100mA
Emitter Cut - Off Current
I
EBO
V
CE(sat)1
Collector - Emitter Saturation Voltage
V
CE(sat)2
V
CE(sat)3
V
CE(sat)4
Base - Emitter Voltage
V
BE(sat)
V
BE(on)
*h
FE1
DC Current Gain
*h
FE2
*h
FE3
*h
FE4
Transition Frequency
Collector Output Capacitance
Turn-on
Switching Time
Turn-off
f
T
C
OB
T
on
T
off
MHz
pF
nS
-
*Measured under pulsed condition. Pulse width = 300 us, Duty cycle
≦
2 %
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A
Page 2 of 4
PZT559A
Elektronische Bauelemente
PNP Silicon
Silicon Planar Medium Power Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A
Page 3 of 4
PZT559A
Elektronische Bauelemente
PNP Silicon
Silicon Planar Medium Power Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Apr-2011 Rev. A
Page 4 of 4
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