PZT158
Elektronische Bauelemente
NPN Transistor
Silicon Planar High Current
Transistor
RoHS Compliant Product
Description
The PZT158 is designed for general
purpose switching and amplifier
applications.
SOT-223
Features
* 6Amps Continous Current, Up To
20Amps Peak Current
* Excellent Gain Characteristic,
Specified Up To 10Amps
* Very Low Saturation Voltages
1 5 8
REF.
A
C
D
E
I
H
Min.
6.70
2.90
0.02
0C
0.60
0.25
Max.
7.30
3.10
0.10
10 C
0.80
0.35
REF.
B
J
1
2
3
4
5
MAXIMUM RATINGS* (T
amb
=25 C, unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Junction and Storage Temperature
o
o
Min.
Max.
13 T YP.
C
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Parameter
Value
150
60
6
6
20
3
-55~-150
Units
V
V
V
A
W
O
I
C
P
D
T
J,
T
stg
C
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise
specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Symbol
BV
CBO
*BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE
(sat)1
*V
CE
(sat)2
*V
CE
(sat)3
*V
CE
(sat)4
*V
BE
(sat)
*V
BE
(on)
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
fT
C
ob
T
on
T
off
Min
150
60
6
-
-
-
-
-
-
-
-
-
100
100
75
25
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
200
-
-
130
45
45
1100
Max
-
-
-
50
50
10
50
100
170
375
1.2
1.15
-
300
-
-
-
-
-
-
2%
Uni
V
V
V
nA
nA
nA
Test Conditions
I
C
= 100µA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 100µA, I
C
=0
V
CB
= 120V, I
E
=0
V
CES
=60V
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
On-Time
Off-Time
V
EB
= 6V, I
C
=0
I
C
= 100mA, I
B
= 5mA
I
C
= 1A, I
B
= 50mA
mV
I
C
= 2A, I
B
= 50mA
I
C
= 6A, I
B
= 300mA
V
I
C
= 6A, I
B
= 300mA
V
V
CE
= 1V, I
C
= 6A
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 2A
V
CE
= 1V, I
C
= 5A
V
CE
= 1V, I
C
= 10A
MH z V
CE
= 10V, I
C
= 100mA, f=50MHz
,
pF V
CB
= 10V, I
E
=0, f=1MHz
nS
V
CC
=10V,I
C
=1A,I
B1
=I
B2
=100mA
*Measured under pulse condition. Pulse width
http://www.SeCoSGmbH.com
300 s, Duty Cycle
Spice parameter data is available upon request for this device.
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
stm32/stm8
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