IRFR540Z
IRFU540Z
Features
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
D-Pak
IRFR540Z
I-Pak
IRFU540Z
Description
Specifically designed for Automotive applications,
thi
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
D
V
DSS
= 100V
R
DS(on)
= 28.5mΩ
G
S
I
D
= 35A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Pulsed Drain Current
I
DM
Max.
35
25
140
91
0.61
± 20
Units
A
W
W/°C
V
mJ
A
mJ
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
d
Ã
h
39
75
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
10 lbf in (1.1N m)
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
y
300
y
j
Parameter
Typ.
Max.
1.64
40
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
ij
–––
–––
–––
2014-8-22
1
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IRFR/U540Z
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
100
–––
–––
2.0
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.092
22.5
–––
–––
–––
–––
–––
–––
39
11
12
14
42
43
34
4.5
7.5
1690
180
100
720
110
190
–––
–––
28.5
4.0
–––
20
250
200
-200
59
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
mΩ
V
S
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 21A
V
DS
= 25V, I
D
= 21A
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 21A
V
DS
= 50V
V
GS
= 10V
V
DD
= 50V
I
D
= 21A
R
G
= 13
Ω
V
GS
= 10V
V/°C Reference to 25°C, I
D
= 1mA
V
DS
= V
GS
, I
D
= 50µA
e
e
e
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
G
D
S
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
32
40
35
A
140
1.3
48
60
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
T
J
= 25°C, I
F
= 21A, V
DD
= 50V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-22
2
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IRFR/U540Z
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
≤60µs
PULSE WIDTH
Tj = 25°C
ID, Drain-to-Source Current (A)
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
10
10
4.5V
≤60µs
PULSE WIDTH
4.5V
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Tj = 175°C
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
Gfs , Forward Transconductance (S)
70
60
50
40
30
20
10
0
VDS = 10V
380µs PULSE WIDTH
TJ = 175°C
TJ = 25°C
ID, Drain-to-Source Current
(Α)
100
10
TJ = 175°C
1
TJ = 25°C
VDS = 25V
0.1
2
3
4
≤60µs
PULSE WIDTH
5
6
7
8
0
10
20
30
40
50
VGS, Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
3
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2014-8-22
IRFR/U540Z
3000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 21A
VDS = 80V
VDS= 50V
VDS= 20V
2500
16
C, Capacitance(pF)
2000
Ciss
12
1500
8
1000
4
500
Coss
Crss
1
10
100
0
0
0
10
20
30
40
50
60
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100µsec
1msec
ISD , Reverse Drain Current (A)
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
100
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0
1
10msec
DC
0.1
0.2
0.4
0.6
0.8
1.0
VGS = 0V
1.2
1.4
10
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
2014-8-22
4
Fig 8.
Maximum Safe Operating Area
www.kersemi.com
IRFR/U540Z
40
2.5
RDS(on) , Drain-to-Source On Resistance
ID = 21A
2.0
VGS = 10V
ID , Drain Current (A)
30
(Normalized)
20
1.5
10
1.0
0
25
50
75
100
125
150
175
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TC , CaseTemperature (°C)
TJ , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.1
0.05
0.02
0.01
τ
J
Ri (°C/W)
τi
(sec)
2.626
0.000052
0.6611
0.7154
0.001297
0.01832
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-22
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