IRF520NS/L
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRF520NS)
Low-profile through-hole (IRF520NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
TO-263
TO-262
Description
The D2Pak is a surface mount power
package capable of accommodating die
sizes up to HEX-4. It provides the high
est power capability and the lowest pos
sible on-resistance in any existing surfa
ce mount package. The D2Pak is suitable
for high current applications because of
its low internal connection resistance and
can dissipate up to 2.0W in a typical surf
ace mount application. The through-hole
version (IRF520NL) is available for low-pr
ofile applications.
D
V
DSS
= 100V
R
DS(on)
= 0.20Ω
G
S
I
D
= 9.7A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
9.7
6.8
38
3.8
48
0.32
± 20
91
5.7
4.8
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
3.1
40
Units
°C/W
2014-8-26
1
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IRF520NS/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
–––
–––
2.0
2.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.5
23
32
23
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.20
Ω
V
GS
= 10V, I
D
= 5.7A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 5.7A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
25
I
D
= 5.7A
4.8
nC V
DS
= 80V
11
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 50V
–––
I
D
= 5.7A
ns
–––
R
G
= 22Ω
–––
R
D
= 8.6Ω, See Fig. 10
Between lead,
nH
7.5 –––
and center of die contact
330 –––
V
GS
= 0V
92 –––
pF
V
DS
= 25V
54 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 9.7
showing the
A
G
integral reverse
––– ––– 38
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 5.7A, V
GS
= 0V
––– 99 150
ns
T
J
= 25°C, I
F
= 5.7A
––– 390 580
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF520N data and test conditions
V
DD
= 25V, starting T
J
= 25°C, L = 4.7mH
R
G
= 25Ω, I
AS
= 5.7A. (See Figure 12)
I
SD
≤
5.7A, di/dt
≤
240A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
2014-8-26
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IRF520NS/L
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BO TTOM 4.5V
TO P
100
10
I , D rain-to-Source Current (A )
D
I , D ra in-to -S o urc e C u rren t (A )
D
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
4 .5V
2 0µ s P U L S E W ID TH
T
C
= 17 5°C
0.1
1
10
100
4 .5V
2 0µ s P U L S E W IDTH
T
C
= 25 °C
0.1
1
10
100
1
A
1
A
V D S , D rain-to-S ource V oltage (V )
V DS , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
R
D S (on)
, Drain-to-S ource O n Resistance
(N orm alized)
I
D
= 9 .5A
I
D
, D rain-to-So urce C urren t (A )
2.5
2.0
T
J
= 25 °C
10
T
J
= 1 7 5°C
1.5
1.0
0.5
1
4
5
6
7
V
DS
= 5 0V
2 0µ s P U L S E W ID TH
8
9
10
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
2014-8-26
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IRF520NS/L
600
500
C
iss
C , Capacitance (pF)
400
300
C
oss
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
is s
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
d s
+ C
gd
20
I
D
= 5.7 A
16
V
D S
= 80 V
V
D S
= 50 V
V
D S
= 20 V
12
8
200
C
rss
100
4
0
1
10
100
A
0
0
5
10
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
15
20
25
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
SD
, Reverse D rain C urrent (A)
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R
D S (o n)
10µs
I
D
, Drain C urrent (A )
10
100µ s
T
J
= 17 5°C
10
T
J
= 2 5°C
1m s
1
10m s
1
0.4
0.6
0.8
1.0
V
G S
= 0V
1.2
A
0.1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
100
1.4
1000
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-8-26
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IRF520NS/L
V
DS
10.0
R
D
V
GS
R
G
8.0
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
10V
6.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4.0
Fig 10a.
Switching Time Test Circuit
V
DS
2.0
90%
0.0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-26
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