IRF1010E
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
TO-220AB
Description
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
G
Power MOSFET
D
V
DSS
= 60V
R
DS(on)
= 12mΩ
S
I
D
= 84A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
84
59
330
200
1.4
± 20
50
17
4.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
2014-8-12
1
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IRF1010E
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
60
–––
–––
2.0
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
12
mΩ V
GS
= 10V, I
D
= 50A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 50A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
130
I
D
= 50A
28
nC V
DS
= 48V
44
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 50A
ns
–––
R
G
= 3.6Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3210 –––
V
GS
= 0V
690 –––
V
DS
= 25V
140 –––
pF
ƒ = 1.0MHz, See Fig. 5
1180
320 mJ I
AS
= 50A, L = 260µH
Typ.
–––
0.064
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
78
48
53
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 84
showing the
A
G
integral reverse
––– ––– 330
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
––– 73 110
ns
T
J
= 25°C, I
F
= 50A
––– 220 330
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Starting T
J
= 25°C, L = 260µH
R
G
= 25Ω, I
AS
= 50A, V
GS
=10V (See
Figure 50A,
I
≤
12) di/dt
≤
230A/µs, V
≤
V
T
J
≤
175°C
SD
DD
(BR)DSS
,
2014-8-12
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IRF1010E
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
I
D
, Drain-to-Source Current (A)
100
4.5V
10
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
I
D
= 84A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 25
°
C
T
J
= 175
°
C
2.0
100
1.5
1.0
0.5
10
4
5
6
7
V DS = 25V
20µs PULSE WIDTH
8
9
10
11
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
2014-8-12
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IRF1010E
6000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
= 50A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
5000
V
GS
, Gate-to-Source Voltage (V)
16
C, Capacitance(pF)
4000
Ciss
12
3000
Coss
2000
8
1000
Crss
4
0
1
10
100
0
0
20
40
60
FOR TEST CIRCUIT
SEE FIGURE 13
80
100
120
140
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
100
100µsec
10
T
J
= 25
°
C
1
10
1msec
0.1
0.0
V
GS
= 0 V
0.6
1.2
1.8
2.4
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
10
10msec
100
1000
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-8-12
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IRF1010E
100
LIMITED BY PACKAGE
80
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
60
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
20
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-12
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